InP-based pin TWA photoreceivers with low group delay scatter over 40 GHz bandwidth

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)

“…The integration of compound semiconductor devices on silicon substrates has been examined for many years. − Successful integration of III−V devices onto silicon-integrated circuits would allow for new architectures with much greater functionality. − Of particular interest to us is the integration of indium phosphide on silicon, since indium phosphide is a technologically important material and widely used in high-speed electronics. − In addition, indium phosphide is an interesting photoelectrode material because of the high reported photovoltage of liquid junction cells fabricated with p-type InP. , However, the principal difficulties with the integration of InP on Si are the presence of a polar/nonpolar interface and the large lattice mismatch between the two semiconductors. These properties result in high defect densities in the III−V materials that degrade device performance. ,, One way to tackle this problem is to fabricate InP devices out of one-dimensional, free-standing nanowires, which are very good at accommodating lattice strain and thermal mismatch. , …”