2006
DOI: 10.1109/lpt.2006.883296
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InP-Based Transverse Junction Light-Emitting Diodes for White-Light Generation at Infrared Wavelengths

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Cited by 14 publications
(9 citation statements)
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“…The horizontal current flow in the transverse p-i-n junction that characterizes our demonstrated SLD means that we can enjoy the advantage of a much more uniform spreading of injected carriers among different MQWs. [9,10]. As can be clearly seen in Fig.…”
Section: Resultsmentioning
confidence: 60%
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“…The horizontal current flow in the transverse p-i-n junction that characterizes our demonstrated SLD means that we can enjoy the advantage of a much more uniform spreading of injected carriers among different MQWs. [9,10]. As can be clearly seen in Fig.…”
Section: Resultsmentioning
confidence: 60%
“…However, as compared with MQW-based SLDs, the performance of such SLDs is more sensitive to the growth conditions of material QDs, which is an important issue for the mass production of such devices. In contrast to VJ SLDs, the structure of transverse-junction stripe (TJS) lasers [7,8] can overcome the problem of nonuniform carrier distribution among different MQWs by utilizing the concentrated transverse flow of injected carriers in the active region [9,10]. Recently we designed and demonstrated TJS light-emitting diodes (LEDs) with a sequence of different emission wavelength MQWs in the active region and with tremendously wide optical bandwidths of 580 nm (1042 to 1622 nm) [9] and 150 nm (988 to 1153 nm) [10] at 1.55 μm and 1.1 μm wavelengths, respectively.…”
Section: Introductionmentioning
confidence: 99%
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