InP-Based Type-II Quantum-Well Lasers and LEDs

Sprengel, Stephan; Grasse, Christian; Wiecha, Peter R.; Andrejew, Alexander; Gruendl, T.; Boehm, Gerhard; Meyer, Ralf; Amann, Markus

doi:10.1109/jstqe.2013.2247572

Cited by 35 publications

(29 citation statements)

References 22 publications

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“…Detailed information of the active region design can be found in Ref. [23]. The photoluminescence (PL) peak of the active region is located around 2.33 μm, so that the gain spectrum can overlap the absorption window of e.g., NH 3 , CO, and CH 4 .…”

mentioning

confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2-3 μm wavelength widely tunable lasers on silicon photonic integrated circuits enables fully integrated spectroscopic sensors with different potential applications such as multi-species trace gas spectroscopy and bio-molecule detection. Here, we demonstrate a continuous-wave (CW) operated III-V-on-silicon distributed feedback (DFB) laser array covered a broad wavelength range from 2.28 to 2.43 μm. CW operation up to 25°C and an on-chip output power of 2.7 mW in a single mode at 5°C is achieved for lasers operating at 2.35 μm wavelength. Four-channel DFB laser arrays with a continuous tuning range of 10 nm and side mode suppression ratio of 40 dB over the whole range are also presented. This work is a major advance toward chip-scale silicon photonics spectroscopic sensing systems. Gas sensing based on short-wave infrared and mid-infrared absorption spectroscopy has been proven to be a reliable technology for trace-gas measurements with fast response time and a high degree of specificity to the target gas [1,2]. However, most present optical sensors consist of discrete optical components and a bulk gas cell, which limits their viability for applications in portable and economical gas analysis. Integrated photonics platforms offer the potential to realize miniature and low-cost optical gas sensors [3][4][5][6]. As one of the most promising integrated photonics platforms, silicon photonics has been well-developed for optical communication applications during the past decade [7]. In recent years, its applications have been extended to sensing applications, including on-chip spectroscopic sensing [8]. Silicon photonics gas sensors that target different components have been demonstrated, including those that use, e.g., microring resonators [9,10] or spiral waveguides [11] to interact with the gas medium. In these gas sensors, the light from an external laser source is coupled into the silicon chip for the on-chip absorption spectroscopy measurement. The development of fully integrated silicon photonic integrated circuits (PICs) in the 2.3 μm wavelength range enable compact gas sensors with high sensitivity, since many important industrial gases (e.g., NH 3 , CO, and CH 4 ) have strong absorption lines in this wavelength range [12]. It is also valuable for bio-sensing applications, such as non-invasive blood glucose measurements [8,13]. For a compact silicon photonics spectroscopic gas sensor, an integrated and tunable single-mode laser is the key component that should be developed. Recently, heterogeneously integrated III-V-on-silicon Fabry-Perot lasers around 2 μm were realized using strained InGaAs Type I heterostructures [14]. However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heteros...

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mentioning

confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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“…Record results [5][6][7][8][9][10] in terms of output power and efficiency were achieved at the long wavelength range at 2 μm and beyond with the use of various material systems and quantum well configurations. Both monolithic [11] and heterogeneous integration [12] technologies that enable access to wavelength bands in the range from 2 to 10 μm have also been demonstrated.…”

Section: Introductionmentioning

confidence: 98%

Monolithically integrated widely tunable laser source operating at 2 μm

Latkowski¹,

Hänsel²,

Veldhoven³

et al. 2016

Optica

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We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.

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“…The spatially indirect transition makes that type-II quantum well photodiodes can dectect longer wavelengths than devices based on a type-I heterostructure. The "W"-shaped structure was initially developed to increase laser gain as it improves the overlap between the wave functions of electron and hole states in a type-II quantum well [15]. For photodiodes, this "W"-shaped design thereby also increases the multi-quantum well absorption coefficient.…”

Section: Introductionmentioning

confidence: 99%

“…For photodiodes, this "W"-shaped design thereby also increases the multi-quantum well absorption coefficient. The specific III-V active region design is described in [15], and has been used for the realization of 2.4 µm wavelength lasers. In our III-V epitaxial layer stack, the active region is sandwiched between a 250 nm thick p-AlGaAsSb and 130 nm thick n-GaAsSb high index layer.…”

Section: Introductionmentioning

confidence: 99%

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

et al. 2015

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Abstract:The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at −0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

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InP-Based Type-II Quantum-Well Lasers and LEDs

Cited by 35 publications

References 22 publications

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Monolithically integrated widely tunable laser source operating at 2 μm

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

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