InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

“…D ISTRIBUTED amplifiers (DAs) in bipolar transistor technology have been shown to offer high gain, wide bandwidth, and high linearity [1], [2]. Such amplifiers have found applications in optical communication systems and wideband pulse systems with their design basis and fundamental limitations been studied and reported in the late 1990s [3]- [5].…”

“…More recently, ultra-wideband amplifiers, in both distributed and nondistributed topologies, using heterojunction bipolar transistor (HBT) technology have been reported by several research groups and have shown that bandwidths up to and beyond 100 GHz with more than 10-dB gain are possible. These amplifiers have been fabricated in technologies that range from SiGe [6] to InGaP [7] and indium-phosphide (InP) HBT [2], [8], [9]. Due to the impressive cutoff frequencies of advanced InP-based HBT processes, this is a very suitable technology to achieve DAs with extremely large bandwidths [2], [10].…”

InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications

“…Recently Chaciński et al reported on EA modulators suitable for 100 Gbit/s Ethernet with a drive voltage as low as 2 V pp for a 10 dB extinction ratio [2]. In this Letter we report on a suitable modulator driver module using an InP DHBT-based distributed amplifier chip which has previously been discussed in detail in [3]. Each of its eight identical gain cells consists of an emitter follower buffer and a cascode output stage using three InP DHBTs with an emitter size of 0.7 Â 4 mm 2 , exhibiting a current gain of 90 and cutoff frequencies exceeding 350 GHz.…”

High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

“…The multiplexer (MUX) operation at ≥ 100 Gb/s has already been reported using different technologies [1]- [3]. In contrast, ultrabroadband amplifiers capable of directly driving optical modulators at 100 Gb/s [4], [5] have, so far, been demonstrated only using InP double-heterojunction bipolar transistors (DHBTs). However, compact high-speed transmitters monolithically integrating the multiplexing and the amplification functions on a single chip that potentially eliminate any bandwidth limiting interfaces are highly desirable.…”