InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Odedeyi, Temitope; Giannakopoulos, Stavros; Zirath, Herbert; Darwazeh, Izzat

doi:10.1109/tcsi.2020.3025487

Cited by 2 publications

(3 citation statements)

References 52 publications

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“…The measured receiver Fig. 19. Measured and simulated receiver gain versus the RF power at 175 GHz for a LO power of −17.5 dBm at 170 GHz.…”

Section: B Receiver Characterizationmentioning

confidence: 99%

“…Finally, with the amplifier being the basic block of transceivers, mixers and other key system parts can be derived from it. The receiver front-end presented in this work makes use of a cascaded single-stage distributed amplifier (CSSDA) [11], [17], [18], [19] optimized for low noise as the first stage of the receiver chain. A single-balanced mixer, with a transconductance stage based on distributed-amplifier techniques and inductive peaking, is then used for the frequency translation of the received signal.…”

Section: Introductionmentioning

confidence: 99%

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A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz

Testa

Riess

Carta

et al. 2021

IEEE Open J. Circuits Syst.

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This work presents a direct-conversion receiver for G-band applications formed by a cascaded single-stage distributed amplifier optimized for low noise, a single-balanced active mixer with inductive peaking and broadband RF matching, and a local oscillator (LO) driver. The receiver is optimized for reduced DC and LO power consumption, while practical levels of linearity and noise are retained. Prototypes of the complete receiver and of the stand-alone mixer are implemented in 0.62 mm 2 and 0.39 mm 2 of a 130 nm SiGe BiCMOS technology with 450 GHz maximum-oscillation frequency. The measured receiver saturated gain in LO compression is 17 dB with a 6 dB band of 60 GHz and a 3 dB band of 30 GHz, while the input power which compresses the gain by 1 dB (P in1dB ) is −35 dBm. The simulated receiver double-sideband noise figure is 11 dB. Finally, the circuit requires an LO power of −17 dBm at 170 GHz and a DC power of 98 mW. The measured gain of the mixer is −13 dB with a 3 dB band of 70 GHz. The component P in1dB is −20 dBm for −18 dBm LO power and 53 mW DC power. These circuits offer one of the largest operation bandwidth together with one of the lowest DC and LO power consumption against the state of the art.

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“…The measured receiver Fig. 19. Measured and simulated receiver gain versus the RF power at 175 GHz for a LO power of −17.5 dBm at 170 GHz.…”

Section: B Receiver Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz

Testa

Riess

Carta

et al. 2021

IEEE Open J. Circuits Syst.

View full text Add to dashboard Cite

show abstract

“…With a correct coupling coefficient (k) of the feedback transformer, the gain-bandwidth (GBW) product of DA can be enhanced by increasing the bandwidth to 33.5GHz, while retaining average gain of 12dB without increasing the power consumption. Odedeyi et al [22] highlighted for ultrawideband amplification, in terms of gain-bandwidth, Superior topologies include the single-stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e., cascaded SSDA (C-SSDA) and matrix SSDA (M-SSDA). The world's first M-SSDA and SSDA MMIC have been announced as two new monolithic microwave integrated circuit (MMIC) amplifiers.…”

Section: Introductionmentioning

confidence: 99%

An Enhanced Design of Cascaded Single-Stage Distributed Amplifiers Utilizing Quasi-Differential Amplifier Cells

Saeed,

Kareem,

Hameed

2023

MMEP

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Cascaded Single-Stage Distributed Amplifiers (CSSDAs) are instrumental in achieving ultra-wideband amplification for microwave applications due to their significant gainbandwidth products. However, their functionality is often compromised by internal noise, which detrimentally impacts the linearity of the response. An innovative solution to this prevalent issue is presented in this study through the introduction of the Quasi-Differential Distributed Amplifier (QDDA). Implementing the 0.18μm Complementary Metal Oxide Semiconductor (CMOS) technology, a QDDA with a single-stage fourcascade configuration was designed, fabricated, and tested. The empirical results revealed a high gain of 20dB and an extensive bandwidth of 30GHz. Moreover, the noise figure was observed to be 4.809 with a compact chip size of 0.74mm² . This design and the resulting findings were accomplished using the Advanced Design System (ADS) RF simulator. The circuit layout and specifications were subsequently generated using the Cadence tool. This research demonstrates the potential of the QDDA to significantly enhance the performance of CSSDAs, contributing to the advancement of ultra-wideband microwave applications.

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InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Cited by 2 publications

References 52 publications

A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz

A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz

An Enhanced Design of Cascaded Single-Stage Distributed Amplifiers Utilizing Quasi-Differential Amplifier Cells

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