InP Gunn Diode Sources

Fank, Berin; Crowley, J. D.; Hang, Connie

doi:10.1117/12.948244

Cited by 12 publications

(2 citation statements)

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“…The accumulation layers formed a little closer to the anode than cathode (about mid way) and grew in size as they transferred from the cathode to anode at the saturation velocity. The resulting frequency was well approximated by f = 2.25×10 5 /Lac Hz (a little over twice the saturation drift velocity of about 0.9×10 5 ms -1 in GaAs and 1.1×10 5 ms -1 at 1x10 6 Vm -1 in InGaAs [31]) over the distance between anode and cathode Lac) [8,17]. Higher biases were needed in the simulation to maintain accumulation layer oscillations as Lac was decreased.…”

Section: Monte Carlo Modelingmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

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The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental modethe shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 µW was obtained from a 600 nm long ×120 µm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible -the Monte Carlo model used predicts power output at frequencies over 300 GHz.

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Section: Monte Carlo Modelingmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…10). The typical temperature increase DT op remains below 100 K at maximum RF output power (25,38), and low operating active-layer temperatures ensure reliability and excellent temperature stability over wide temperature ranges of À30 C to þ70 C for devices at 56 GHz (38) and 94 GHz (38,39) as well as of 0 C to 50 C for devices at 140 GHz (25). The temperaturedependent performance of a D-band InP Gunn device in Fig.…”

Section: Current-limiting Cathode Contactmentioning

confidence: 99%

Gunn or Transferred‐Electron Devices

Eisele

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Transferred‐electron devices are the only microwave devices whose operation is solely based on the bulk‐material properties of semiconductors such as GaAs or InP. These devices are mainly employed in low‐noise medium‐power oscillators up to high millimeter‐wave frequencies. James B. Gunn was the first scientist to observe the underlying physical phenomenon in an experiment and, therefore, these devices are often referred to as Gunn devices. This chapter describes the principles of operation, basic fabrication technologies, and common oscillator circuits for them. Different device structures for performance optimization, optimization procedures, and simulation tools are discussed. The chapter also summarizes the current state of the art of Gunn devices and the outlook covers the prospects of more recent device structures and material systems.

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Gunn or Transferred‐Electron Devices

Eisele

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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InP Gunn Diode Sources

Cited by 12 publications

References 0 publications

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Gunn or Transferred‐Electron Devices

Gunn or Transferred‐Electron Devices

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