1997
DOI: 10.1049/el:19970069
|View full text |Cite
|
Sign up to set email alerts
|

InP/InGaAs double-HBT technology for high bit-ratecommunication circuits

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

1997
1997
2004
2004

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 13 publications
(2 citation statements)
references
References 2 publications
0
2
0
Order By: Relevance
“…The major advantages are a reduced base-emitter capacitance, lower series base resistance, higher output conductance, higher current gain, etching selectivity between InP and InGaAs, larger valence band discontinuity ( E V ), small conductionband discontinuity ( E C ) and lower surface recombination velocity [5][6][7]. InP/InGaAs double heterostructure HBTs with a wide bandgap InP collector permit marked improvements because of their high-speed capability with improved breakdown behaviour [8][9][10][11]. Chau et al [8] have shown the superiority of DHBTs over SHBTs in terms of RF performance and breakdown voltage by theoretical analysis.…”
Section: Introductionmentioning
confidence: 99%
“…The major advantages are a reduced base-emitter capacitance, lower series base resistance, higher output conductance, higher current gain, etching selectivity between InP and InGaAs, larger valence band discontinuity ( E V ), small conductionband discontinuity ( E C ) and lower surface recombination velocity [5][6][7]. InP/InGaAs double heterostructure HBTs with a wide bandgap InP collector permit marked improvements because of their high-speed capability with improved breakdown behaviour [8][9][10][11]. Chau et al [8] have shown the superiority of DHBTs over SHBTs in terms of RF performance and breakdown voltage by theoretical analysis.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 Grading the emitter-base junction offers the advantage of a lower turn-on voltage, which, in turn, lowers the power consumption of the device. 3,4 A graded compositecollector which also contains a thin n-InGaAs layer in between the p + InGaAs base region and the n-InP collector region of the DHBT structure improves the high current transport characteristics of the device without sacrificing gain or speed.…”
Section: Introductionmentioning
confidence: 99%