InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Oh, Jae Eung; Lamb, Joel D.; Snyder, Paul G.; Woollam, John A.; Liu, David C.

doi:10.1016/0038-1101(86)90017-1

Cited by 11 publications

(2 citation statements)

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“…However, this is verified only for silicon substrates. The successful use of other model combinations in the past in the case of III-V substrates [10], need to be examined for a further investigation about the universal use of the extended tunnelling model. The other important result depicted in table 2 is the calculated values of the relevant time constants, τ TI and τ TS .…”

Section: Resultsmentioning

confidence: 99%

“…However, different models were used in order to analyse the experimental data in other cases, i.e. Oh et al [10] used a combination of the discrete and the continuum models to fit data of MIS structures of diamond-like carbon on indium phosphide substrates. Khan et al [7] used the tunnelling model to fit their data on Al/C/Si devices, where they claimed that they did not use the statistical model because they did not understand the behaviour of the σ parameter.…”

Section: Introductionmentioning

confidence: 99%

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New evidence on the relation between tunnelling and trap density at insulator/semiconductor interfaces

Konofaos¹

2001

Semicond. Sci. Technol.

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Admittance spectroscopy measurements on metal-insulator-semiconductor (MIS) devices allow the determination of electronic states at the insulator/semiconductor interface. The contribution of the ac conductance on the measurements allows the calculation of the interface traps density and the relevant time constant. The experimental data can be analysed using either a model based on the Shockley-Read-Hall (SRH) recombination statistics or via the tunnelling process and recent results allowed both descriptions to be applied on various insulator/semiconductor structures. In the present investigation, the interface states for several MIS devices on a variety of thin film insulators deposited on Si substrates were studied. These devices included structures such as a-C/Si, a-C:H/Si, CN/Si and BaTiO 3 /Si. Admittance spectroscopy took place and the SRH-based models as well as the tunnelling-based models were used to analyse the data. The results showed that the two models could produce equivalent results if a contribution of a continuum of states following the SRH statistics is being included in the tunnelling model.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%