InPBi Quantum Dots for Super-Luminescence Diodes

Abstract

InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to serve as the active material for future InPBi SLDs. The quantum confinement for carriers and reduced spatial size of QD structure can improve light emission efficiently. We employ finite element method to simulate strain distribution inside QDs and use the result as input for calculating electronic properties. We systematically investigate different transitions involving carriers on the band edges and the deep levels as a function of Bi composition and InPBi QD geometry embedded in InAlAs lattice matched to InP. A flat QD shape with a moderate Bi content of a few percent over 3.2% would provide the optimal performance of SLDs with a bright and wide spectrum at a short center wavelength, promising for future optical coherence tomography applications.

Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

“…This provides a partial strain relaxation into the SAQD and reduces absolute peak values of deformation tensor components down to ε xx = 6.78% and ε zz = 4.49%, compared to 6.83%, as governed by the lattice constants mismatch. The results are in good agreement with the III–V SAQD strains discussed in the literature [ 67 , 68 , 69 , 70 ]. Note that the strain distribution is not significantly changed by the alloy composition variation.…”

“…In this simple case, the deformation is almost localized in the thin strained layer, in contrast to the case of 3D SAQD, where the surrounding matrix layers are also strained [ 67 , 68 , 69 , 70 ]. The strain distribution over the SAQD volume and attached matrix material was calculated by the elastic energy minimization technique.…”

GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes

“…The broad and strong PL of InPBi thin film at room temperature makes it a potential material for fabricating super-luminescence diodes (SLDs) applied in OCT [8]. Recently, the InPBi quantum dot (QD)/InAlAs on InP was predicted to be an effective structure to provide confinement for the carriers to increase photon emission efficiency and further broaden the PL spectra [9]. However, when investigating the barrier material for the InPBi QD on the InP lattice-matched systems, such as InAlAs, InGaAs and AlAsSb, the Bi content should be over 2%, 7.4% and 6.1%, respectively, to ensure a type-I band alignment.…”