Inprovement of the Shallow Base Transistor Technology by Use of a Doped Poly-Silicon Diffusion Source

Takagi, Mikio; Nakayama, Keiichi I.; Terada, C.; Kamioka, Hayato

doi:10.7567/ssdm.1972.3-3

Cited by 9 publications

(11 citation statements)

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“…PAsH3 (i) '--PAs (s) -~ 2PAs2 (s) ~-4PAs4 (s) [8] Therefore, from the calculation of Eq. [1], [2], and [8], and the experimental data of CAs at v = 0 for various PAsHa(i)'s, the dependences of CAs upon PAs (s), PAs2 (s), and PAsd(s) under the equilibrium condition, respectively, are estimated, which a~ shown in Fig. 6.…”

Section: [I]mentioning

confidence: 99%

“…Combining Eq. [1], [2], [4], [5], and [9], Eq. The CAs vs. deposition rate curves calculated from Eq.…”

Section: [I]mentioning

confidence: 99%

“…Arsenic-doped polycrystalline silicon (As-doped poly-Si) is an important material as a diffusion source for the emitters of microwave transistors (1,2) and as a gate electrode of MOSLSI's (3). In the fabrication process of fine pattern silicon devices, the deposition temperature of As-doped poly-Si has been selected in the range between 650 ~ and 800~ taking account of grain size (4)(5)(6).…”

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Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4 ‐ H 2 ‐ AsH3 Gas System

Murota

Arai

Kudo

1980

J. Electrochem. Soc.

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The arsenic concentration (CAs) in polycrystalline silicon (poly-Si) deposited under various deposition conditions in the deposition temperature range 670~176 using SiH4-H2-AsH3 gas system has been determined by neutron activation analysis. From the experimental results, it was found that CAs increases with decreasing deposition temperature and with increasing partial pressure of AsH3 in the gas introduced into the reactor (PAsH3Ci)), and that for lower PAsH3 (i) region, CAs decreases with decreasing gas velocity and with increasing deposition rate, and for higher PAsH3(i) region, CAs is independent of gas velocity and deposition rate. From the analyses of the experimental data, it was suggested that (i) for lower PAsHS(i) region, CAs is limited by the diffusion of As-containing species, such as As molecule, As2 molecule, and A~4 molecule, in the stagnant layer formed by gas stream, and for higher PAsH.~ (i~ region, gAs is controlled by the surface reaction; (ii) monatomic As existing at wafer surface is incorporated in poly-Si in accordance with Henry's law;(iii) the transfer coefficient of As atoms in gas phase increases slightly with increasing deposition temperature and gas velocity; (iv) the segregation coefficient of monatomic As between gas phase and poly-Si (m) is approximated by m = 1.5 • l0 s exp (--71.5 kcal/mole/RT); (v) the energy of As-Si bond is 44.5 kcal/mole. Arsenic-doped polycrystalline silicon (As-doped poly-Si) is an important material as a diffusion source for the emitters of microwave transistors (1, 2) and as a gate electrode of MOSLSI's (3). In the fabrication process of fine pattern silicon devices, the deposition temperature of As-doped poly-Si has been selected in the range between 650 ~ and 800~ taking account of grain size (4-6). The deposition rate, structure, and resistivity of As-doped poly-Si have been investigated by many workers (5-7), however, little has been known about As doping mechanism of chemical vapor deposited poly-Si at deposition temperature between 650 ~ and 800~ which is a basic knowledge for using As-doped poly-Si.In the present work, the As concentration (CAs) in poly-Si deposited under various deposition conditions in the deposition temperature range 670~176 using the SiH4-H2-AsH~ gas system was obtained by neutron activation analysis. From the experimental results, it was suggested that, for lower PAsH3 (i) region, CAs is limited by the diffusion of As-containing species in the stagnant layer (8) formed by gas stream, and for higher PAsHa(i) region, CAs is controlled by the surface reaction, and that monatomic As existed at wafer surKey words: CVD, doping, semiconductor, bonding.face is incorporated in poly-Si in accordance with Henry's law. The temperature dependences of the transfer coefficient of As atoms in H2 and the segregation coefficient of monatomic As between gas phase and poly-Si were also obtained, and the energy of As-Si bond was determined using Weiser's model (9). ExperimentalThe As-doped poly-Si was deposited in an rf heated reactor usi...

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Section: [I]mentioning

confidence: 99%

“…Combining Eq. [1], [2], [4], [5], and [9], Eq. The CAs vs. deposition rate curves calculated from Eq.…”

Section: [I]mentioning

confidence: 99%

mentioning

confidence: 99%

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Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4 ‐ H 2 ‐ AsH3 Gas System

Murota

Arai

Kudo

1980

J. Electrochem. Soc.

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“…However, reducing the baseemitter junction depth in conventional metal-contacted transistors causes the base current to be unacceptably high and very sensitive to the contact properties. Polysilicon emitter contacts significantly improve bipolar device performance, because they produce a highly abrupt, shallow base-emitter profile without a reduction in current gain since the metal contact is moved away from the junction [1].…”

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confidence: 99%

Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI

et al. 1987

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Key electrical characteristics of polysilicon emitter contacts in bipolar transistors, such as contact resistance and recombination velocity, are extremely sensitive to the microstructure of the polysilicon/single-crystal silicon interface. In this study, we correlated the microstructural and electrical characteristics of this interface by performing cross-sectional transmission electron microscopy (XTEM) on actual transistors on the same chip where ringoscillator speeds were measured. The base current and emitter resistance of the fastest devices approached values typical of singlecrystal silicon emitters. Interpretation of these electrical data and of the SIMS impurity profile indicates that significant restructuring of the polysilicon/single-crystal interface had taken place. This conclusion was indeed confirmed by the XTEM results. Although the low-current performance was degraded because of higher junction capacitances, the high-current switching speed was improved because of the minimal emitter contact resistance. Since the current gain was sufficiently high and very uniform, it is concluded from this work that minimization of both junction depth and contact resistance is the most important design consideration for high-performance submicron transistors, rather than maximization of the gain enhancement of the polysilicon/single-crystal interface.^Copyright 1987 by International Business Machines Corporation. Copying in printed form for private use is permitted without payment of royalty provided that (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract, but no other portions, of this paper may be copied or distributed royalty free without further permission by computer-based and other information-service systems. Permission to republish any other portion of this paper must be obtained from the Editor.

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“…(V = 0.6 V, N A (N D ) = 2×10 18 cm −3 (10 15 cm −3 ), R = 100 nm, r 1 = 2.5 nm, and W p = 97.5 nm. )semisphere according to1 …”

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A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula>

Peibst

Römer

Hofmann

et al. 2014

IEEE J. Photovoltaics

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We present an analytical model for the current transport in polycrystalline (poly)Si/interfacial oxide/monocrystalline (c)-Si base junctions, which consistently describes the symmetrical behavior of an n + poly-Si emitter/p c-Si base and p + poly-Si emitter/n c-Si base configuration. Our model is focused on a regime within which the current transport is possibly dominated by a flow through oxide pinholes rather than by tunneling. For an emitter region assumed to form underneath the interfacial oxide by diffusion of dopants from the poly-Si into the c-Si, we calculate the minority charge carrier distribution and the resistance implied for majority charge carriers. With reasonable parameters, our model simultaneously reproduces the experimentally observed low emitter saturation current densities and low junction resistances values. Our model provides a plausible explanation for the high current gain observed in p-n-p and n-p-n bipolar transistors featuring a poly-Si emitter. In principle, the obtained correlation between recombination current and series resistance is analogous to the situation in a base region of a solar cell with local rear contacts. Thus, a poly-Si/c-Si junction can be explained within the framework of a classical p-n junction picture for a passivated, locally contacted emitter.

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Inprovement of the Shallow Base Transistor Technology by Use of a Doped Poly-Silicon Diffusion Source

Cited by 9 publications

References 0 publications

Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4 ‐ H 2 ‐ AsH3 Gas System

Arsenic Doping of Chemical Vapor Deposited Polycrystalline Silicon Using SiH4 ‐ H 2 ‐ AsH3 Gas System

Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI

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