Input-Output Harmonic Controlled Broadband Class-B/J Power Amplifier

Tamrakar, Vivek; Dhar, Sagar K.; Sharma, Tushar; Mukherjee, Jayanta

doi:10.1109/apmc52720.2021.9661990

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…However, in practice, performance variation is observed for the continuous mode Class B/J PAs. Many previous works [27]- [31], and load pull studies have shown that capacitive regions on smith chart show higher efficiency than inductive region with second harmonic loading. However, the theoretical explanation behind the phenomenon is still unknown and demands a comprehensive study.…”

Section: Introductionmentioning

confidence: 91%

Investigation of Input-Output Waveform Engineered High-Efficiency Broadband Class B/J Power Amplifier

et al. 2022

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Section: Introductionmentioning

confidence: 91%

Investigation of Input-Output Waveform Engineered High-Efficiency Broadband Class B/J Power Amplifier

et al. 2022

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“…The high-efficiency performance can be achieved by using harmonically tuned PAs [1], [2]. This technique reduces power dissipation by minimizing the current and voltage waveform overlap.…”

Section: Introductionmentioning

confidence: 99%

Design of a Compact GaN Power Amplifier With High Efficiency and Beyond Decade Bandwidth

Zhou

Perez-Cisneros

Langborn

et al. 2022

IEEE Microw. Wireless Compon. Lett.

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This letter presents a power amplifier (PA) design and network synthesis approach to achieve wideband and efficient performance with a very compact circuit size. A design method is presented in detail to convert a canonical filterbased high-order matching network to the proposed matching configuration with transistor parasitic and packaged elements absorption, and a compact passive network footprint. As a proof of concept, a prototype GaN HEMT PA is implemented. Starting from a fourth-order output network filter, the inductances and capacitance of the filter elements are re-organized to model, and thus absorb the output parasitics of the transistor, leading to a compact footprint with only four transmission lines. The measured results show that the prototype PA achieves an output power of 41.9-44.3 dBm and a 55-74% drain efficiency, over a record-high decade bandwidth (0.35-3.55 GHz).

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Input–output waveform engineered inverse Class F power amplifiers with high efficiency

Zhu,

Cheng,

Jia

et al. 2024

Circuit Theory & Apps

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This paper studies the influence of the gate voltage of the power amplifier (PA) on the drain current and efficiency. This study proposes a theory of controlling input non‐linearity to improve the efficiency of PAs. The theoretical efficiency of the inverse Class F PA that controls the input nonlinearity is within the range of 77% to 97%. A new design method for the inverse Class F PA reconstructs the design of the load admittance space into a region instead of a point. To verify the validity of the proposed theory, an inverse Class F PA is designed and fabricated using a commercial 10 W GaN high electron mobility transistor (HEMT). Results of the measurement show a high drain efficiency (DE) of 78.5%, an output power of 41.6 dBm, and a large signal gain of 12.1 dB at 1.5 GHz. The overall PA's size is controlled at 80*50 .

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Input-Output Harmonic Controlled Broadband Class-B/J Power Amplifier

Cited by 6 publications

References 10 publications

Investigation of Input-Output Waveform Engineered High-Efficiency Broadband Class B/J Power Amplifier

Investigation of Input-Output Waveform Engineered High-Efficiency Broadband Class B/J Power Amplifier

Design of a Compact GaN Power Amplifier With High Efficiency and Beyond Decade Bandwidth

Input–output waveform engineered inverse Class F power amplifiers with high efficiency

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