“…Low-dimensional InSb nanostructures have sparked interest in the past few years due to their potential applications in high-speed and low-power electronics [ 1 , 2 ], infrared optoelectronics [ 3 ], spintronics [ 2 , 4 , 5 ], quantum electronics [ 6 , 7 ], and topological quantum computation [ 8 ]. These applications stem from the outstanding intrinsic properties of InSb such as a narrow band gap (≅0.23 eV) [ 4 , 9 , 10 ], high bulk electron mobility (7.7 × 10 4 cm 2 /(V s)) [ 1 , 11 ], small effective mass ( m ∗ = 0.018 m e ) [ 4 , 11 , 12 , 13 , 14 , 15 ], and a large Landé g-factor ( |g ∗ | ∼50, [ 11 , 15 ]). Among the most influential developments are the topological superconducting quantum devices based on InSb nanowires (NWs) [ 16 , 17 ].…”