InSbN alloys prepared by two-step ion implantation for infrared photodetection

Abstract

InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-ray photoelectron spectroscopy indicates that most of the implanted nitrogen ions substitute Sb to form In–N bonds. The percentage of the In–N bonds is found to decrease with the increase in the implanted nitrogen. Such alloys can effectively detect long wavelength infrared radiation and the absorption peak energies can be controlled by monitoring the implanted nitrogen dose. The measured peak wavelengths are consistent with the band gaps of the alloys calculated using a ten-band k⋅p model.

Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition

“…The infrared detectors developed with this material work at wavelength range from 1 to 6 mm. In addition, by adding elements like nitrogen (N), arsenic (As) or bismuth (Bi), the band gap of InSb could be extended to longer wavelength which becomes suitable for infrared photodetection [6][7][8][9][10]. In addition, InSb also has other applications, such as magnetic field sensors and other optoelectronic devices [11][12][13][14].…”

Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys

“…4 presents the comparison core N1s spectra of samples before and after annealing at 700 1C for 15 min. We find that before annealing, besides the peaks at a binding energy of 397.5 meV and 403.8 meV that are known for Ga-N bonds [22] and interstitial N-N split couples [23], respectively, there is a weak shoulder at the high-energy side of the Ga-N peak. The origin of this peak is assumed to be related to mixed III-N-V compound by several research groups [22,24].…”

Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition

“…From the area covered by each type of bonding over the total area of the spectrum, the contributions of the four types of N bonds are 27% (In-N), 13% (In-N-Sb), 46% (Sb-N) and 14% (N-N), respectively. It means that most of the incorporated N occupies the position of In and forms N-Sb bonds as antisite defects, which is different from the samples grown by MBE or direct N implantation [2,12]. The antisite defects in a single crystal may not contribute to the bandgap reduction but do contribute to the lattice mismatch.…”

“…From the calculation using a 10-band k.p model, the band gap reduction of the sample corresponds to 0.07% In-N bonds in the InSbN epilayer [2]. According to Vegard's law, a content of 0.07% In-N bonds in the InSbN epilayer would cause a lattice mismatch (Δa/a 0 ) of about À 1.2 Â 10 À 4 , which is far away from the value of À 4.5 Â 10 À 4 deduced from the XRD measurement.…”

“…InSbN alloys have attracted attention recently due to their applications for long wavelength emission and detection [1][2][3][4][5]. It was reported that the Auger recombination rate of InSbN alloys, which is the key parameter for light sources and photodetectors, is only one-third of that of HgCdTe at equivalent band gap due to its high electron mass and conduction band nonparabolicity [6].…”