Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI 2021
DOI: 10.1117/12.2578318
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Inscription in the glass of efficient Gauss to top-hat converters based on Pancharatnam-Berry phase by high power femtosecond laser pulses

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“…In this section, we report on the performance of the PBP element that was manufactured by Altechna R&D with the transmittance being higher than 90% over a broad spectral region [63]. This implementation of GPOE enables beam-shaping of high-energy beams because these elements can withstand pulses of 1.5 mJ energy and 158 fs FWHM duration at 1030 nm [41,43].…”
Section: Experimental Verificationmentioning
confidence: 99%
“…In this section, we report on the performance of the PBP element that was manufactured by Altechna R&D with the transmittance being higher than 90% over a broad spectral region [63]. This implementation of GPOE enables beam-shaping of high-energy beams because these elements can withstand pulses of 1.5 mJ energy and 158 fs FWHM duration at 1030 nm [41,43].…”
Section: Experimental Verificationmentioning
confidence: 99%
“…Internal inscription using ultrafast laser pulses is a powerful approach for fabricating advanced devices of diffractive optics [10], optoelectronic [11], lab-on-chip [12], micro-electro-mechanical systems (MEMS) [13], photonic crystal fibres [14], and quantum computing devices [15]. The lithography can be employed to produce similar structures with more accuracy and precise than laser inscription.…”
Section: Introductionmentioning
confidence: 99%