Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO₂ ferroelectric capacitors*

Abstract

We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau–Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.

Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

“…However, carbon contaminants are unavoidable in HZO films during the ALD process, which have a negative effect on the formation of the o-phase. − The sputtering technique is an effective method for preparing HZO due to its low cost and flexible deposition conditions . It was found that the best doping concentration of ferroelectric properties in the Hf X Zr 1– X O 2 system is X = 0.5 …”