Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Abstract

The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary Ge 29 Sb 8 Se 63 thin films, was studied. The study of time evolution of the absorption coefficient Δ α ( t ) upon room-temperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.

Enhancing Thickness Uniformity of Nb2O5/SiO2 Multilayers Using Shadow Masks for Flexible Color-Filtering Applications

“…In the realm of sputtering technologies for depositing microfilms, achieving uniformity in the surface morphologies is paramount for ensuring optimal performance across various applications [1][2][3][4][5]. Two problems generally occur in terms of the uniform distribution of the thickness deposited by the direct current (dc) reactive magnetron sputtering system.…”

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

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