In this study, the thermionic vacuum arc (TVA) method was employed to fabricate thin films of zinc oxide (ZnO) doped with copper oxide nanoparticles (CuONPs). The primary objective was to investigate the influence of the substrate on the characteristics of the CuONPs-doped ZnO thin films. CuONPs were synthesized using both the solution plasma process and the high-voltage liquid plasma generation method, resulting in particle sizes ranging from 20 to 40 nm. The X-ray diffraction (XRD) pattern confirmed the polycrystalline nature of the CuONPs. The prepared CuONPs in powder form were blended with ZnO powder and utilized as an anode material for TVA discharge and coating. The structural, optical, elemental, and topological properties of the resulting thin films were systematically examined. The findings revealed that the deposited thin films exhibited a polycrystalline structure, with transparent and electrically conductive layers. Similar reflection values were observed for films deposited on both glass and indium tin oxide (ITO)-coated glass substrates. Nanostructures on the film surfaces were elucidated through field emission scanning electron microscopy images. The atomic ratios of Cu/Zn were determined as 1/3 and 1/10 for films deposited on uncoated and ITO-coated glass substrates, respectively. The mean grain size of the nanoparticles on the film surface measured approximately 17 nm for films deposited on uncoated glass substrates and 35 nm for those deposited on ITO-coated glass substrates. The film resistance was measured at 20 kΩ, indicating its suitability as a semiconductor. Analysis of the XRD pattern identified peaks corresponding to CuONPs and ZnO in the deposited films, affirming their polycrystalline nature. In conclusion, the deposited thin films exhibit favorable characteristics for semiconductor applications, and the coating method employed proves to be effective in producing high-quality thin films.
