InP quantum dots (QDs) are regarded as the most promising
star
material to replace Cd-based QDs due to their excellent properties
of low toxicity and tunable luminescence in the visible to infrared
range. Red and green InP QDs have been shown to have excellent performance
comparable to that of Cd-based QDs, but in contrast, blue InP QDs
are still lagging behind. The smaller size of the core is a challenge
for synthesizing high-performance blue InP QDs compared with red and
green QDs. In this study, deep blue-emitting InP QDs were synthesized
using a cheaper and safer phosphorus source: tris(dimethylamino)phosphine
((DMA)3P). A double Zn and Ga modification was applied
to modulate the emission of InP QDs. A strategy for synthesizing deep
blue luminescent In(ZnGa)P QDs was proposed, and Zn(Ac)2 was used as a precursor to react with (DMA)3P to synthesize
blue InP QDs. Doping elemental Zn during nucleation inhibited the
growth of the InP crystals and narrowed the lattice. Then, the Ga
element further increases the material band gap by cation exchange.
By introducing GaI3 into the synthesis process and utilizing
the cation-exchange mechanism, deep blue emission InP QDs was realized.
Tunable deep blue emission of InP QDs changed from 478 to 447 nm was
achieved by this strategy. Specially, an 84% photoluminescent quantum
yield is obtained for 457 nm emission QDs. This study provides clues
for InP QDs to be emitted in the deep blue region, with the aim of
constructing efficient deep blue QDs light-emitting diodes.