Insight of stress effect on the ONO stack layer in a sONOS-type flash memory cell

Barrier engineering in metal–aluminum oxide–nitride–oxide–silicon (MANOS) flash memory: Invited

“…Fig. 6 shows schematics of the gate stack and band diagram for band-engineered SONOS devices [7,31,33,34]. The thin ONO stack underneath the charge storage layer plays a role in barrier engineering.…”