Insights into few-layer epitaxial graphene growth on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>substrates from STM studies

Biedermann, Laura; Bolen, Michael; Capano, Michael A.; Zemlyanov, Dmitry; Reifenberger, R.

doi:10.1103/physrevb.79.125411

Cited by 225 publications

(170 citation statements)

References 61 publications

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“…16 Graphene growth was carried out at 1300 C to 1400 C in vacuum after an initial in-situ surface preparation of the substrates in a hydrogen/silane background. One of the samples was then intercalated in hydrogen at a temperature (pressure) of 800 C (500 mbar) in order to obtain quasi-free standing graphene.…”

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confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz 1 =2 and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors. Graphene exhibits electronic properties which are relevant for high-frequency applications 1 such as zero-bias detection in passive imaging arrays. 2 Detectors drawing zero bias current offer reduced 1/f-noise compared to biased detectors. Zero-bias detectors are today normally based on heterojunctions or Schottky diodes, reaching noise-equivalent power (NEP) below 20 pW/Hz 1 =2 beyond 100 GHz. 3,4 Zero-bias detection has been demonstrated in graphene field-effect transistors (FETs) with an NEP of 515 pW/Hz 1 =2 at 600 GHz. 5 Self-switching diodes (SSDs) offer a fundamentally different approach to zero-bias detection in which rectification and detection is achieved by a lateral field-effect. 6 Simulations have shown the feasibility of achieving rectification in graphene using SSD structures. 7,8 SSD detectors have previously been realized in other materials 9-12 with the most promising results for GaAs SSDs in which an NEP of 330 pW/Hz 1 =2 at 1.5 THz was observed. 13 In this work, detection with rectifying graphene SSDs at frequencies up to 67 GHz is demonstrated. The SSDs are realized in both as-grown (n-type) and hydrogen-intercalated (p-type) epitaxial graphene on SiC. Figure 1 shows a scanning electron micrograph of a single SSD channel fabricated in epitaxial graphene. The narrow graphene channel behaves as a lateral nanowire transistor. 6 The surrounding flanges act as lateral gates which are directly connected to the drain such that the drain voltage is simultaneously applied to the gates. This has the effect of modulating the carrier density in the nanowire channel generating a nonlinear current-voltage characteristic. 14 The inset shows an SSD design implemented for RF detection with nine nanowire channels acting in parallel to reduce resistance and NEP. 15 The SSDs were fabricated at the end of a 70 lm coplanar transmission line, in order to provide a partial RF match.Graphene was grown on the Si-face of two 20 Â 20 mm 2 nominally on-axis semi-insulating (SI) 4H-SiC substrates in a horizontal hot wall chemical vapor deposition (CVD) reactor. 16 Graphene growth was carried out at 1300 C to 1400 C in vacuum after an initial in-situ surface preparation of the substrates in a hydrogen/silane background. One of the samples was then intercalated in hydrogen at a temperature (pressure) of 800 C (500 mbar) in order to obtain quasi-free standing graphene. SSDs and supplementary test structures were fabricated on the graphene layers with and without H-intercalation. As-grown samples then consisted of a monolayer plus carbon buf...

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confidence: 99%

Graphene self-switching diodes as zero-bias microwave detectors

Westlund

Winters

Ivanov

et al. 2015

Applied Physics Letters

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“…The essential electronic properties can be drastically changed by the layer number [35][36][37], stacking configuration [37][38][39][40][41][42], magnetic field [43,44], electric field [45][46][47], dopping [48,49], mechanical strain [50][51][52], and temperature variation [53,54]. Few-and multi-layer graphenes have been successfully produced by experimental methods such as exfoliation of highly orientated pyrolytic graphite [55][56][57][58], metalorganic chemical vapour deposition (MOCVD) [61][62][63][64][65][66], chemical and electrochemical reduction of graphene oxide [67][68][69], and arc discharge [70,71]. There exist important stacking configurations, including AAB [57,58,69], ABC [59,60,[66][67][68][69], AAA …”

Section: Introductionmentioning

confidence: 99%

“…Few-and multi-layer graphenes have been successfully produced by experimental methods such as exfoliation of highly orientated pyrolytic graphite [55][56][57][58], metalorganic chemical vapour deposition (MOCVD) [61][62][63][64][65][66], chemical and electrochemical reduction of graphene oxide [67][68][69], and arc discharge [70,71]. There exist important stacking configurations, including AAB [57,58,69], ABC [59,60,[66][67][68][69], AAA [62,63], ABA [60,61,66,69], and twisted [62,69] and turbostratic ones [64]. The interlayer atomic interactions and stacking configurations induce the rich electronic properties of graphene.…”

Section: Introductionmentioning

confidence: 99%

Configuration-enriched magneto-electronic spectra of AAB-stacked trilayer graphene

Lin

et al. 2015

Carbon

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We developed the generalized tight-binding model to study the magneto-electronic properties of AAB-stacked trilayer graphene. Three groups of Landau levels (LLs) are characterized by the dominating subenvelope function on distinct sublattices. Each LL group could be further divided into two sub-groups in which the wavefunctions are, respectively, localized at 2/6 (5/6) and 4/6 (1/6) of the total length of the enlarged unit cell. The unoccupied conduction and the occupied valence LLs in each subgroup behave similarly. For the first group, there exist certain important differences between the two sub-groups, including the LL energy spacings, quantum numbers, spatial distributions of the LL wavefunctions, and the field-dependent energy spectra.The LL crossings and anticrossings occur frequently in each sub-group during the variation of field strengths, which thus leads to the very complex energy spectra and the seriously distorted wavefunctions. Also, the density of states (DOS) exhibits rich symmetric peak structures. The predicted results could be directly examined by experimental measurements. The magnetic quantization is quite different among the AAB-, AAA-, ABA-, and ABC-stacked configurations.

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“…At growth temperatures ≥ 1550 o C, several-micron large regions of smooth graphene films are obtained with tens of nanometers high ridges as domain boundaries. 16 Without gate stacks, the multi-layer graphene films on C-face are mostly p-type with a typical Hall mobility of 5000-6000 cm 2 /Vs. On Si face, continuous few-layer graphene only starts to form at 1550 o C. The growth on Si-face is much slower, making it possible to form single layer graphene with a better controlled process.…”

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confidence: 99%

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Shen¹,

Gu²,

Xu³

et al. 2009

Applied Physics Letters

120

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Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Haas oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).

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Insights into few-layer epitaxial graphene growth on4H-SiC(0001¯)substrates from STM studies

Cited by 225 publications

References 61 publications

Graphene self-switching diodes as zero-bias microwave detectors

Graphene self-switching diodes as zero-bias microwave detectors

Configuration-enriched magneto-electronic spectra of AAB-stacked trilayer graphene

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

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