Among the family of II3V2-type compounds,
zinc phosphide (Zn3P2) occupies a unique position.
As one of the most promising semiconductors well-suited for photovoltaic
applications, Zn3P2 has attracted considerable
attention. The stability of its structure and properties are of great
interest and importance for science and technology. Here, we systematically
investigate the pressurized behavior of Zn3P2 using in situ synchrotron radiation angle-dispersive X-ray diffraction
(ADXRD) and in situ electrical resistance measurement under high
pressure. The ADXRD experiment shows that Zn3P2 undergoes an irreversible structural phase transition under high
pressure, beginning at 11.0 GPa and being completed at ∼17.7
GPa. Consistently, the high-pressure electrical resistance measurement
reveals a pressure-induced semiconductor-metal transition for Zn3P2 near 11.0 GPa. The kinetics of the phase transition
is also studied using in situ electrical resistance measurement and
can be well described by the classical Avrami model. What’s
more, the new high-pressure structure of Zn3P2 is refined to be orthorhombic with space group Pmmn; the lattice parameters and bulk modulus of this high-pressure phase
are determined as a = 3.546 Å, b = 5.004 Å, c = 3.167 Å, and B
0 = 126.3 GPa. Interestingly, we also predict a possible
structural phase transformation of orthorhombic phase (Pmmn) to cubic phase (P4232) during the decompression
process; this cubic Zn3P2 is metastable at ambient
conditions. These experimental results reveal the unexpected high-pressure
structural behaviors and electrical properties of Zn3P2, which could help to promote the further understanding and
the future applications of Zn3P2 as well as
other II3V2 compounds.