Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films

Fix, Thomas; Schmerber, G.; Rehspringer, Jean‐Luc; Rastei, M. V.; Roques, S.; Bartringer, J.; Slaoui, A.

doi:10.1016/j.jallcom.2021.160922

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…Furthermore, a principle called epitaxial stabilization helps synthetizing complex material by using an appropriate substrate playing the role of a template to promote the right phase formation. This has been demonstrated for example with h-TbMnO3 thin film fabrication while orthorhombic TbMnO3 is the most stable phase [11,12]. Films grown on STO (110) using a CuGaO2-stoichiometry target provided CuGa2O4 films with the following orientation CuGa2O4 (220)//STO(110) while films grown on ALO (0001) provided CuGa2O4 films with CuGa2O4 (222)//ALO(0001) orientation (Figure 1).…”

Section: Pld Growthmentioning

confidence: 87%

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

et al. 2022

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β-CuGaO2 is a wurtzite-derived phase that is promising for ferroelectric and photovoltaic applications. Its bandgap measured in the form of powders is about 1.5 eV and is direct according to density functional theory calculations, making it an appropriate solar light absorber. In this work, we describe our attempts to grow this complex phase by pulsed laser deposition (PLD) that resulted in growing mostly CuGa2O4 on various crystal substrates such as SrTiO3 (STO), Al2O3 (ALO), ZnO and ZrO2:Y (9.5 mol%Y2O3) (YSZ). In contrast, β-CuGaO2 is obtained using ion-exchange of β-NaGaO2 film fabricated with a cost-efficient spin coating by solgel method, on substrates composed of a SiN film on c-Si (001) wafer. The potential of the different films obtained is discussed in view of photovoltaic applications using Surface Photovoltage under white light and Surface Photovoltage spectroscopy. While we show that 2 β-CuGaO2 is a suitable photon absorber we conclude that the fact that the films are discontinuous is detrimental for electronic transport and additional dopants must be inserted in this material to promote its optoelectronic properties and charge carrier transport.

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Section: Pld Growthmentioning

confidence: 87%

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

et al. 2022

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“…[ 1 ] These oxide absorbers offer stability, nontoxicity, abundance of elements, and scalability. Research on oxide photovoltaic absorbers includes the well‐studied Cu 2 O, [ 2 ] h‐TbMnO 3 , [ 3 ] β‐CuGaO 2 , [ 4 ] KBiFe 2 O 5 , [ 5 ] the LaVO 3 [ 6 ] perovskite, and the double perovskite Bi 2 FeCrO 6 . [ 7 ] Oxide perovskites of the form ABO 3 possess extraordinary properties such as superconductivity, magnetism, (multi)ferroicity, [ 8 ] and 2D electron gas.…”

Section: Introductionmentioning

confidence: 99%

Sensitive Bandgap Reduction of SrTiO₃ through Incorporation of Sulfur Using Ion Implantation

Fix,

Zakaria,

Stoeffler

et al. 2024

Solar RRL

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SrTiO3 (STO) is a well‐known perovskite oxide often used, among others, as a crystalline substrate for epitaxial deposition. However, its indirect bandgap of 3.25 eV is too high for solar applications. Tentative experiments to reduce its bandgap are very welcome. To this end, we performed sulfurization of STO substrates using ion implantation. The simulated profile is controlled by Time‐of‐Flight Secondary Ion Mass Spectrometry (TOF‐SIMS). We demonstrate that S is at least partially inserted into the STO lattice, as evidenced by X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS). UV‐visible spectroscopy indicates a drastic reduction of the bandgap of S:STO from 3.25 eV (indirect) down to 2.14 eV for 10% S:STO, a trend also observed by spectroscopic ellipsometry. We confront the results to ab initio calculations. Besides bandgap, the valence band level, that is the ionization energy, was determined by Ambient‐Pressure Photoemission Spectroscopy (APS) so that the complete energy diagrams could be plotted. This work paves the way for tuning the bandgap of perovskites in a highly controlled manner for solar energy applications.This article is protected by copyright. All rights reserved.

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“…Because pulsed laser deposition (PLD) is well known to enable the formation of metastable phases, as in the case for example of h-TbMnO3 less stable than o-TbMnO3 [12], we attempt in this work to obtain CaTiS3 perovskites. We use PLD for film growth, using a target mixing the two CaS and TiS2 precursors.…”

Section: Introductionmentioning

confidence: 99%

Insights on CaTiS3 films grown by pulsed laser deposition

Fix

Raissi

Müller

et al. 2023

Journal of Alloys and Compounds

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Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films

Cited by 3 publications

References 27 publications

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

Sensitive Bandgap Reduction of SrTiO₃ through Incorporation of Sulfur Using Ion Implantation

Insights on CaTiS3 films grown by pulsed laser deposition

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Insights on hexagonal TbMnO3 for optoelectronic applications: From powders to thin films

Cited by 3 publications

References 27 publications

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

Preparation of β-CuGaO2 thin films by ion-exchange of β-NaGaO2 film fabricated by a solgel method

Sensitive Bandgap Reduction of SrTiO3 through Incorporation of Sulfur Using Ion Implantation

Insights on CaTiS3 films grown by pulsed laser deposition

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Resources

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Sensitive Bandgap Reduction of SrTiO₃ through Incorporation of Sulfur Using Ion Implantation