Insights on optical and charge density properties of semiconducting chalcopyrites ZnAP2 (A = Si, Ge, Sn) using modified Becke-Johnson potential – A first principles study

Investigation of optoelectronic & thermoelectric features of ZnCrX2 (X = S Se Te) chalcopyrite semiconductor using mBJ potential

“…It was found that ZnCrTe2 has greater optical conductivity for low energy photons, this is indicative of large absorption of a photon in this range. These materials exhibit significant absorption in the UV region of the solar spectrum, making them ideal for UV detectors, X-ray phosphors, photovoltaic materials for space technologies, and LED solid-state illumination [57].…”

Significant Pressure-Enhanced Photoelectric Properties and Extended Spectral Response Range in Zn-Based Chalcopyrite ZnGeP2

“…Ternary Zn-based chalcopyrites ZnXP 2 (X = Si, Ge, and Sn) have rapidly developed because of their commercial value and promising applications in nonlinear optical, photoelectric, and photovoltaic devices. − Among these, ZnSiP 2 is a promising candidate for Si-based solar cells as a direct band gap semiconductor with a band gap of 2.01 eV. , ZnSnP 2 is regarded as a potential practical photovoltaic material due to its peculiar band structure and stable physicochemical properties. ,− ZnGeP 2 has also been successfully applied as a photocatalyst for hydrogen production due to its excellent nonlinear optical properties . In combination with its midsized band gap, the p-type ZnGeP 2 nanowire shows great potential in photoelectrochemical energy storage .…”