2023
DOI: 10.3390/electronics12092116
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Insulated Gate Bipolar Transistor Reliability Study Based on Electro-Thermal Coupling Simulation

Abstract: This paper presents a new electro-thermal coupling simulation method for evaluating the reliability of IGBT modules, which combines a numerical power loss model and a finite element model. To illustrate the method, a specific case of the Infineon FF50R12RT4 module operated with an SPWM signal is considered. Temperature and stress data are obtained and analyzed via electro-thermal simulation, and the service life of modules is calculated accordingly. The influence of ambient temperature and gate signal characte… Show more

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Cited by 3 publications
(1 citation statement)
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“…where the conduction power of the IGBT is denoted as P cond_Tr , and the conduction power of the FWD is denoted as P cond_D [38]. Eventually, the conduction power losses of the IGBT and FWD can be derived by ( 19) and (20).…”
Section: Power Lossmentioning
confidence: 99%
“…where the conduction power of the IGBT is denoted as P cond_Tr , and the conduction power of the FWD is denoted as P cond_D [38]. Eventually, the conduction power losses of the IGBT and FWD can be derived by ( 19) and (20).…”
Section: Power Lossmentioning
confidence: 99%