Insulating properties of rapid thermally processed Bi2Ti2O7 thin films by a chemical solution decomposition technique

Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (BixTiyOz) Films Produced through Radiofrequency Magnetron Sputtering

“…Research on applications for this phase of Bismuth Titanate is focused on photocatalysis, due to the fact that it is capable of decomposing a wide variety of organic and inorganic pollution and toxic materials, which might solve both environmental and energy problems in the future [9]. However, exploitation of the rest of the properties of this compound has been object of research for some groups; for instance, its high permittivity and significantly low current leakage make it a promising alternative for gate insulating layers in advanced MOS transistors [10]. Besides the two Bismuth Titanate phases described above, another phase of this material exists, the Bi 20 TiO 12 phase.…”

Preparation, characterization, photocatalytic activity and conductivity of BiLnZr2O7 (Ln = La, Sm, Eu and Gd)

“…Pyrochlore materials containing bismuth have potential applications for low-fire high frequency devices due to their low sintering temperatures (<950 C), high quality factor (4 ¼ (dielectric loss À1 )) and controllable temperature coefficient of capacitance (TCC) [6,7]. Further, Bi 3þ containing A 2 B 2 O 7 oxides have been used to improve the electrical characteristics of Bi 4 Ti 3 O 12 [8] and PZT [9] ferroelectric thin films and are potential gate materials for advanced metal oxide semiconductor (MOS) transistors [10]. The studies pertaining to photocatalytic activity of ternary A 2 B 2 O 7 type oxides with pyrochlore structure have been reported [11,12].…”

Leakage current behavior of La-doped Bi2Ti2O7 thin films by a chemical solution deposition method

“…Jiang [5] reported that Bi 2 Ti 2 O 7 phase disappears from the XRD pattern as annealed at above 600 8C, suggesting that the phase of Bi 2 Ti 2 O 7 is unstable at high-annealed temperature (N600 8C). Polycrystalline thin films of composition Bi 2 Ti 2 O 7 [6] have high permittivity and low leakage current. They have been used to improve the electrical properties of Bi 4 Ti 3 O 12 [6], PZT [7] and PST [8] ferroelectric thin films and considered promising gate materials for advanced MOS transistors [9].…”

“…Polycrystalline thin films of composition Bi 2 Ti 2 O 7 [6] have high permittivity and low leakage current. They have been used to improve the electrical properties of Bi 4 Ti 3 O 12 [6], PZT [7] and PST [8] ferroelectric thin films and considered promising gate materials for advanced MOS transistors [9]. Recently, Yao et al [10] has reported that the crystal of Bi 2 Ti 2 O 7 can be used as photocatalyst, which exhibits higher photocatalytic activity than the Degussa P-25.…”