Recent developments in plasma assisted physical vapour deposition
(PAPVD) processes are reviewed. A short section on milestones in advances in
PAPVD covering the time period from 1938 when the first PAPVD system was
patented to the end of the 1980s is followed by a more detailed discussion of
some more recent advances, most of which have been related to increases in
plasma density. It has been demonstrated that the state of the art PAPVD
processes operate in a plasma density range of 1011 to 1013 cm-3. In this range a substantial fraction of the plasma consists of
ionized film forming species. Hence, the energy of the condensing film forming
species can be directly controlled, as opposed to utilizing indirect energy
control with, for example, ionized inert gas bombardment. For a large variety
of applications ranging from ceramic film synthesis at conditions far from
thermodynamic equilibrium to state of the art metallization technology, such
direct energy control of the condensing film forming species is of critical
importance, and offers the possibility to engineer the coating microstructure
and hence the coating properties.