Insulator Metal Transition-Based Selector in Crossbar Memory Arrays

Abstract

This article investigates resistive random access memory (ReRAM) crossbar memory arrays, which is a notable development in non-volatile memory technology. We highlight ReRAM’s competitive edge over NAND, NOR Flash, and phase-change memory (PCM), particularly in terms of endurance, speed, and energy efficiency. This paper focuses on the architecture of crossbar arrays, where memristive devices are positioned at intersecting metal wires. We emphasize the unique resistive switching mechanisms of memristors and the challenges of sneak path currents and delve into the roles and configurations of selectors, particularly focusing on the one-selector one-resistor (1S1R) architecture with an insulator–metal transition (IMT) based selector. We use SPICE simulations based on defined models to examine a 3 × 3 1S1R ReRAM array with vanadium dioxide selectors and titanium dioxide film memristors, assessing the impact of ambient temperature and critical IMT temperatures on array performance. We highlight the operational regions of low resistive state (LRS) and high resistive state (HRS), providing insights into the electrical behavior of these components under various conditions. Lastly, we demonstrate the impact of selector presence on sneak path currents. This research contributes to the overall understanding of ReRAM crossbar arrays integrated with IMT material-based selectors.

Investigation of Resistance Switching and Synaptic Properties of VOx for Neuromorphic Applications

“…Therefore, VO 2 has the potential for wearable electronics. There is great interest in VO x -based memristive devices, especially in the construction of matrix multiplication or cross-bar-arrays to be used in performing high data-intensive tasks such as artificial neural networks. , By using the electron beam lithography technique, it is possible to fabricate a high-density 3D cross-bar array for the hardware implementation of neuromorphic computing . Additionally, 2D metal oxides and porous crystalline materials are among the structures that have recently attracted great attention from researchers working on memory and neuromorphic computing systems. , …”