Insulators for 2D nanoelectronics: the gap to bridge

Abstract

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

Time series modeling of the cycle-to-cycle variability in h-BN based memristors

“…Nevertheless, other dielectric alternatives based on 2D materials are being considered due to the outstanding features of the electron devices that employ them [7][8][9][10]. Intense research efforts are being conducted to describe yield, variability, reliability and stability in the field of 2D materials based solid-state nano/micro-electronic devices [9,10].…”

“…Nevertheless, other dielectric alternatives based on 2D materials are being considered due to the outstanding features of the electron devices that employ them [7][8][9][10]. Intense research efforts are being conducted to describe yield, variability, reliability and stability in the field of 2D materials based solid-state nano/micro-electronic devices [9,10]. 2D dielectric memristor technology can lead to solutions to some of the issues that show up in memristors industrial applications linked to non-volatile memories [2,9], entropy sources for cryptographic hardware (random number generation and implementation of physical unclonable functions [2,9,11]) and, most important, neuromorphic computing [2,8,10].…”

“…Intense research efforts are being conducted to describe yield, variability, reliability and stability in the field of 2D materials based solid-state nano/micro-electronic devices [9,10]. 2D dielectric memristor technology can lead to solutions to some of the issues that show up in memristors industrial applications linked to non-volatile memories [2,9], entropy sources for cryptographic hardware (random number generation and implementation of physical unclonable functions [2,9,11]) and, most important, neuromorphic computing [2,8,10]. In the latter case, the fabrication of devices that mimic the behavior of biological synapses is essential [8,12,13].…”

Native O and Se Vacancy Defects in Bi2O5Se, Bi2O9Se3, and Bi2O10Se3 Dielectrics for Nanoelectronics

“…High‐ k native dielectrics are a plus. Unfortunately, major 2D semiconductors, such as MoS 2 , WSe 2 , [ 29 ] HfSe 2 , ZrSe 2 , [ 30 ] and HfS 2 , [ 31 ] have not yet given rise to workable devices based on native high‐ k stacks by thermal oxidation.…”

Bi2O2Se:Bi2O5Se High‐K Stack as a 2D Analog of Si:SiO2: A First‐Principles Study

“…However, the use of these native oxides as gate insulators in 2D devices has not been demonstrated so far. [ 35 ] For Hf‐ and Zr‐based TMDs, none of the currently reported TMD:oxide interfaces for 2D devices are truly native, still formed by either transfer, deposition techniques or laser writing. [ 36–38 ] Recently, Li et al [ 39 ] reported Bi 2 O 2 Se‐based MOSFETs with native Bi 2 O 5 Se as the gate dielectric which was made from Bi 2 O 2 Se by thermal oxidation, just as in traditional Si MOSFETs.…”