Integral evaluation in the mathematical and numerical modelling of high-electron-mobility transistors

Cole, E. A. B.

doi:10.1088/0953-8984/13/3/311

Cited by 8 publications

(5 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…o odinger wave equation. The electron density and electron energy densities were approximated with fully degenerate statistics [13]. A novel model for Ohmic contacts was used for the source and drain boundary conditions, which improved the representation of the device and enhanced simulation stability.…”

Section: Resultsmentioning

confidence: 99%

Hot‐electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Hussain¹,

Cole²,

Snowden³

2002

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYHot-electron numerical simulations were carried out in order to simulate the DC parameters of pseudomorphic high electron mobility transistors (pHEMTs). The hot-electron effects were studied by simulating several HEMT device structures. Hot-carrier injection in the substrate and the formation of the peak of electric field in the channel were studied in detail. The inclusion of a field-plate contact in a multiple recessed pHEMT structure lowered the peak value of the electric field by 24% compared with the conventional pHEMT. These devices were modelled by solving the two-dimensional Poisson, current continuity and energy transport equations consistently with the time-independent Schr . o odinger wave equation. Appropriate Ohmic boundaries are discussed here and implemented in the simulations of pHEMT structures. A new integral approximation is used to calculate electron densities and electron energy densities for degenerate approximations.

show abstract

Section: Resultsmentioning

confidence: 99%

Hot‐electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Hussain¹,

Cole²,

Snowden³

2002

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

“…The final column labelled 'previous' gives the corresponding results obtained in the first attempt which used a non-GA method [1]. The results of this table show that the relative percentage Figure 3.…”

Section: Comparison Of the Performances Of The Three Statisticsmentioning

confidence: 99%

“…The associated Fermi integrals which arise in the modelling of HEMTs are defined by [1] I r ða; bÞ 1 Gðr þ 1Þ In order to discuss the nature and use of these integrals, consider the four-layer HEMT device whose two-dimensional cross-section is shown in Figure 1. It consists of layers of different semiconducting materials, in this case of GaAs and AlGaAs.…”

Section: Introductionmentioning

confidence: 99%

“…When these parameters have been calculated, the functions L r may be rapidly evaluated for any values of a and b; and used in place of the exact function L r ða; bÞ: As the notation implies, the values of the parameters will depend on the particular order r of the Fermi integral. This problem has been considered previously [1] by taking the three-parameter approximation…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Integral evaluation in semiconductor device modelling using simulated annealing with Bose–Einstein statistics

Cole

2007

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYFermi integrals arise in the mathematical and numerical modelling of microwave semiconductor devices. In particular, associated Fermi integrals involving two arguments arise in the modelling of HEMTs, in which quantum wells form at the material interfaces. The numerical evaluation of these associated integrals is time consuming. In this paper, these associated integrals are replaced by simpler functions which depend on a small number of optimal parameters. These parameters are found by optimizing a suitable cost function using a genetic algorithm with simulated annealing. A new method is introduced whereby the transition probabilities of the simulated annealing process are based on the Bose-Einstein distribution function, rather than on the more usual Maxwell-Boltzmann statistics or Tsallis statistics. Results are presented for the simulation of a four-layer HEMT, and show the effect of the approximation for the associated Fermi integrals. A comparison is made of the convergence properties of the three different statistics used in the simulated annealing process.

show abstract

“…As the aim of the present, the corrected accurate analytical method established in Ref. [11] has been applied to realistic the GaN based multilayer device to optimize their design. Therefore it is going to be shown that the instant mathematical and numerical modeling engages an important role in picturing the corresponding energy and electron densities for such structures.…”

Section: Introductionmentioning

confidence: 99%

Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors

Saygi¹

2014

OJAppS

View full text Add to dashboard Cite

In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of heterojunction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.

show abstract

Integral evaluation in the mathematical and numerical modelling of high-electron-mobility transistors

Cited by 8 publications

References 14 publications

Hot‐electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Hot‐electron numerical modelling of short gate length pHEMTs applied to novel field plate structures

Integral evaluation in semiconductor device modelling using simulated annealing with Bose–Einstein statistics

Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors

Contact Info

Product

Resources

About