Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors

Guo, Erjuan; Xing, Shen; Dollinger, Felix; Hübner, René; Wang, Shu‐Jen; Wu, Zhongbin; Leo, Karl; Kleemann, Hans

doi:10.1038/s41928-021-00613-w

Cited by 34 publications

(23 citation statements)

References 43 publications

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“…By combining nanoimprint lithography and self-aligned photolithography, Rothländer et al (26), Gold et al (27), and Higgins et al (28)(29)(30) fabricated flexible organic TFTs with channel lengths as small as 380 nm, gate-to-contact overlaps as small as 100 nm, and transit frequencies up to 2.8 MHz. For vertical organic permeablebase transistors in which the distance traveled by the charge carriers from the emitter to the collector is defined by a deposited-layer thickness and only the parasitic overlaps are defined by lithography, operation at frequencies up to 100 MHz at a supply voltage of 4 V (25 MHz/V) has been reported (31).…”

Section: Introductionmentioning

confidence: 99%

Nanoscale flexible organic thin-film transistors

et al. 2022

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Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small as 200 nm and gate-to-contact overlaps as small as 100 nm on glass and on flexible transparent polymeric substrates. The p-channel transistors have on/off current ratios as large as 4 × 10 9 and subthreshold swings as small as 70 mV/decade, and the n-channel transistors have on/off ratios up to 10 8 and subthreshold swings as low as 80 mV/decade. These are the largest on/off current ratios reported to date for nanoscale organic transistors. Inverters based on two p-channel transistors with a channel length of 200 nm and gate-to-contact overlaps of 100 nm display characteristic switching-delay time constants between 80 and 40 ns at supply voltages between 1 and 2 V, corresponding to a supply voltage–normalized frequency of about 6 MHz/V. This is the highest voltage-normalized dynamic performance reported to date for organic transistors fabricated by maskless lithography.

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Section: Introductionmentioning

confidence: 99%

Nanoscale flexible organic thin-film transistors

et al. 2022

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“…The performance of state-of-the-art OPBTs, which possess a vertical channel length of < 300 nm is remarkable and hero devices with f T /V = 4.65 MHz V −1 have been measured using a pulse-biasing method to avoid self-heating effects. [23] Furthermore, recently Guo et al [24] demonstrated complementary ring-oscillators based on OPBTs with a stage delay of 11 ns at a supply voltage of only 4 V as well as dual-base devices enabling precise threshold voltage tuning for logic gates. [25] However, OPBTs also have a couple of disadvantages.…”

Section: Introductionmentioning

confidence: 99%

“…[ 23 ] Furthermore, recently Guo et al. [ 24 ] demonstrated complementary ring‐oscillators based on OPBTs with a stage delay of 11 ns at a supply voltage of only 4 V as well as dual‐base devices enabling precise threshold voltage tuning for logic gates. [ 25 ] However, OPBTs also have a couple of disadvantages.…”

Section: Introductionmentioning

confidence: 99%

High‐Frequency Operation of Vertical Organic Field‐Effect Transistors

et al. 2022

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The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is a key requirement for the commercial success of flexible electronics. Significant progress has been achieved in this regard by several research groups highlighting the potential of OTFTs to operate at several tens or even above 100 MHz. However, technology maturity, including scalability, integrability, and device reliability, is another crucial point for the semiconductor industry to bring OTFT-based flexible electronics into mass production. These requirements are often not met by high-frequency OTFTs reported in the literature as unconventional processes, such as shadow-mask patterning or alignment with unrealistic tolerances for production, are used. Here, ultra-short channel vertical organic field-effect transistors (VOFETs) with a unity current gain cut-off frequency (f T ) up to 43.2 MHz (or 4.4 MHz V −1 ) operating below 10 V are shown. Using state-of-the-art manufacturing techniques such as photolithography with reliable fabrication procedures, the integration of such devices down to the size of only 12 × 6 μm2 is shown, which is important for the adaption of this technology in high-density circuits (e.g., display driving). The intrinsic channel transconductance is analyzed and demonstrates that the frequencies up to 430 MHz can be reached if the parasitic electrode overlap is minimized.

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“…On the basis of the high reliability of the modified all-photolithography, we manufactured organic ring oscillators (ROs) with two channel lengths of 5 and 10 μm to demonstrate the effects of scaling down. Ring oscillators served as model circuits with strict requirements for device uniformity and processing reliability, which can further verify the reliability of the all-photolithography process. , On the other hand, these requirements can magnify the disparity in inverter performance induced by scaling down. As shown by the circuit diagram (Figure a) and OM images (Figure b–d), as-fabricated ROs are mainly composed of an odd number of inverters in a loop.…”

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confidence: 99%

Patterning an Erosion-Free Polymeric Semiconductor Channel for Reliable All-Photolithography Organic Electronics

Chen

Yan

Wang

et al. 2022

J. Phys. Chem. Lett.

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Reliable patterning of organic semiconductors (OSCs) with high uniformity is essential to all-photolithography organic electronics. However, the majority of cross-linked OSCs experience performance fluctuations after photolithography because of the inherent vulnerability of low-ordered regions. Herein, we develop an anti-solution penetration photolithography process to achieve the reliable patterning of the OSC layer for allphotolithography integrated organic electronics. Using a thick and highly cross-linked semiconductor film and a low-solubility developer, an erosion-free semiconductor channel is obtained with a high mobility of up to 1.254 cm 2 V −1 s −1 and a uniform threshold voltage close to zero. Compared with existing all-photolithography organic circuits, the unit logic gate area consumption is lower by 1−3 orders of magnitude at 0.0069 mm 2 , while the transistor density is higher by 1−2 orders of magnitude at 6780 Tr cm −2 . The miniaturized organic inverters maintain uncompromised voltage gains, and the 15-stage organic ring oscillators feature higher oscillation frequencies, making them promising for applications in wide-ranging integrated organic circuits.

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Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors

Cited by 34 publications

References 43 publications

Nanoscale flexible organic thin-film transistors

Nanoscale flexible organic thin-film transistors

High‐Frequency Operation of Vertical Organic Field‐Effect Transistors

Patterning an Erosion-Free Polymeric Semiconductor Channel for Reliable All-Photolithography Organic Electronics

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