2006 Canadian Conference on Electrical and Computer Engineering 2006
DOI: 10.1109/ccece.2006.277303
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Integrated Electro-Absorption Modulator and GaAs HBT Driver Circuit

Abstract: A method was developed to double the voltage at the input of an electro-absorption modulator (EAM) by directly mounting the EAM on the driver, without using a matching resistor. The driver circuit was a travelling wave HBT amplifier with a measured 3dB bandwidth of greater than 40GHz and a gain of 12dB. A simulated EAM optical output was shown for a 2.50 Volt 40Gb/s drive voltage. To my knowledge this is the first such driver/EAM circuit to use the voltage doubling method.

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Cited by 2 publications
(1 citation statement)
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“…AWG-based), a thermo-electric cooler (TEC) that consumes 2.88 W is required for each DFB laser in order to avoid thermally driven wavelength drifts. As estimated in [33], for an optical input power of 13 dBm the EAM average power consumption is 30 mW and requires a driver that consumes 1 W. The 1 × M switch can be implemented with M 2 1 elementary 1 × 2 switches. For every configuration of a 1 × M switch, log 2 M rings are active and drain power.…”
Section: Power and Scalability Analysismentioning
confidence: 99%
“…AWG-based), a thermo-electric cooler (TEC) that consumes 2.88 W is required for each DFB laser in order to avoid thermally driven wavelength drifts. As estimated in [33], for an optical input power of 13 dBm the EAM average power consumption is 30 mW and requires a driver that consumes 1 W. The 1 × M switch can be implemented with M 2 1 elementary 1 × 2 switches. For every configuration of a 1 × M switch, log 2 M rings are active and drain power.…”
Section: Power and Scalability Analysismentioning
confidence: 99%