Integrated finely tunable microring laser on silicon

Liang, Di; Huang, Xiaoping; Kurczveil, Géza; Fiorentino, Marco; Beausoleil, Ray

doi:10.1038/nphoton.2016.163

Cited by 121 publications

(65 citation statements)

References 30 publications

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“…4(c) presents the zoomed-in emission spectra as the substrate temperature was ramped up with the pump power doubling the lasing thresholds, offset vertically for clarity. The intensity ratio of TE 1,6 to TE 1,7 becomes larger at a higher temperature (P pump ¼ 2 Â P th ), because of the temperature redshift in the material gain. A high characteristic temperature, T 0 % 123 K in the range of 20-60 C was extracted for the TE 1,6 mode in Fig.…”

Section: -3mentioning

confidence: 99%

“…Although group-IV-based optical building blocks including silicon modulators, 2 microring resonators, 3 waveguides, 4 and germanium photodetectors 5 have demonstrated their techno-economic viability, an efficient Si-based laser source remains the most challenging component due to the indirect bandgap of Si. 6 Integrating high performance III-V lasers with Si has been considered a promising path to resolve this challenge. Wafer or die bonding has been shown as a successful approach, demonstrating impressive device performances, [7][8][9] and has gradually been adopted by industry.…”

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confidence: 99%

“…These compact microdisk lasers are advantageous for low power consumption and high quality factor (a few thousands). 6,18 Shrinkage of the disk size opens new venues for future nanophotonic circuits and dense integration. Using QDs as the active medium to effectively counter balance the surface recombination, 19 as well as optimizing the smoothness of the disk sidewall, we are able to overcome the radiative losses and scale the microdisk diameter down to 1.5 lm.…”

mentioning

confidence: 99%

“…3(b)). Here, only the lowest radial order modes with different azimuthal mode numbers (TE 1,6 and TE 1,7 modes in Fig. 3(c) denote radial mode number l ¼ 1, and azimuthal mode number m ¼ 6 or 7) appear in the 1.5 lm MDLs because higher radial order modes may easily be coupled into the supporting post (undercut $270 nm).…”

mentioning

confidence: 99%

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1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

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Section: -3mentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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“…To date, wafer bonding has achieved a dominance in Si photonic integration area [3], [22], [23], as it allows for the combination of light emitting capability of III-V materials with light routing of Si waveguide. Notably, smaller cavity length lasers have successfully been realized by using integrated mirrors, such as distributed Bragg reflectors [24], [25], reflective multimode interferometers [26] or ring structure, which allows for the formation of large number of channels, while, with reduced crosstalk between adjacent channels as well as laser cavity without the requirement for polishing facets [23]. In addition to wafer bonding, monolithic growth method is another rapid-growing research area due to its cost-effective and massive scalable integration merits.…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Liao

Chen

Huo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated Manuscript lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.Index Terms-Molecular beam epitaxy, quantum dots, semiconductor lasers, silicon photonics, focused ion beam. College London, where he is currently a Professor of semiconductor photonics. His research interests include the nanometer-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques. He has co-authored more than 300 papers in the area of semiconductor materials and devices.

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Graphene‐Based Silicon Photonic Devices for Optical Interconnects

Wang,

Cai,

Jiang

et al. 2023

Adv Funct Materials

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The exponential growth of global data traffic is driven by the unprecedented digitalization of the world. To meet the demands of next‐generation high‐capacity data communication systems, innovative solutions are required. Silicon photonics has gained significant attention due to its ability to integrate multiple core functions of optical interconnects into small‐scale chips, offering cost‐effective and scalable manufacturing capabilities. By leveraging silicon photonics, it becomes possible to address the challenge of scaling system complexity while reducing size, cost, and energy consumption. Despite its advantages, silicon has inherent limitations that restrict its application range, such as the weak plasma dispersion effect and relatively large bandgap. Recently, graphene has emerged as a promising solution for traditional silicon photonics because of its exceptional electrical and optical properties. For instance, graphene on a silicon chip enables nearly pure phase modulation and ultrafast photodetection beyond 500 GHz. Moreover, the demonstrated compatibility of graphene with wafer‐level integration paves the way for mass production of graphene‐based silicon photonic devices, offering improved yield, scalability, and cost‐effectiveness. In this work, a comprehensive review is provided, focusing on graphene‐based silicon photonic devices and their applications in optical interconnects, aiming to explore the potential of graphene in advancing silicon photonic technology.

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Integrated finely tunable microring laser on silicon

Cited by 121 publications

References 30 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Graphene‐Based Silicon Photonic Devices for Optical Interconnects

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