Integrated Four-Wavelength DFB Diode Laser Array for Continuous-Wave THz Generation

Sun, Mengdie; Shi, Tan; Guo, Fei; Liu, Songtao; Kan, Qiang; Lu, Dan; Zhang, Ruikang; Zhao, Wu; Liu, Song; Wang, Wei; Broeke, R.G.; Soares, Francisco; Chen, Ji

doi:10.1109/jphot.2016.2580940

Cited by 14 publications

(4 citation statements)

References 17 publications

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“…The self-heterodyne measurements demonstrate that the optical linewidth of DFB laser in the presented technology is estimated to be around 20 ∼ 40 MHz, based on the fact that the self-heterodyne electrical linewidth is approximately two times the optical linewidth. The measured linewidth appears reasonably wider compared to previous works in the same technology [13] (∼10 MHz) and in the private III-V lab dedicated fabrication technology [21] (∼1 MHz). With an ultra low noise current source to drive the laser, the linewidth is Testing of the on-chip microwave generation via O/E conversion is carried out with a MPI ground-signal-ground (GSG) probe for the PIN-diode.…”

Section: Characterization Resultssupporting

confidence: 45%

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Monolithically Integrated Microwave Frequency Synthesizer on InP Generic Foundry Platform

Zarzuelo

Guzmán

et al. 2018

J. Lightwave Technol.

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A photonic integrated circuit for microwave generation is proposed and experimentally validated. On the microchip, two tunable monochromatic lasers spectrally separated by 0 -10.7 nm are monolithically integrated with one high-speed photodiode in heterodyne configuration for enabling continuous RF synthesis from 2 to 42 GHz. Under free-running operation, the two lasers with 20 -40 MHz optical linewidth produce RF beat note with ∼90 MHz electrical linewidth at the onchip photodiode. This is the first demonstration of such a fully integrated microwave photonic generator developed within an open-access generic foundry platform.

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Section: Characterization Resultssupporting

confidence: 45%

“…In Ref. [16] and [13], four-DFB arrays were deployed to extend the tuning range to above 2 THz, but incapable of on-chip O/E conversion, ei-Fig. 2: The proposed optical heterodyning device structure emits both the optical signal from the spot-size converter and the electrical signal from the PIN photodiode.…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated Microwave Frequency Synthesizer on InP Generic Foundry Platform

Zarzuelo

Guzmán

et al. 2018

J. Lightwave Technol.

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“…Access to InP PICs from this fabrication process is provided in the form of generic-foundry runs (so-called multi-project wafer MPW runs) at scheduled intervals. This generic-foundry process has already been used to realize numerous complex InP PICs for various applications [7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

InP-Based Foundry PICs for Optical Interconnects

et al. 2019

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This paper describes a fabrication process for realizing Indium-Phosphide-based photonic-integrated circuits (PICs) with a high level of integration to target a wide variety of optical applications. To show the diversity in PICs achievable with our open-access foundry process, we illustrate two examples: a fully-integrated 20 Gb/s dual-polarization electro-absorption-modulated laser, and a balanced detector composed of avalanche photodiodes for detection of 28 Gb/s optical signals. On another note, datacenters are increasingly relying on hybrid integration of PICs from different technology platforms to increase transmission capacity, while simultaneously lowering cost, size, and power consumption. Several technology platforms require surface coupling rather than the traditional edge coupling to couple the light from one PIC to another. To accommodate the surface-coupling approach in our integration platform, we have developed a strategy to transfer the following optical Input/Output devices into our fabrication process: grating couplers, and vertical mirrors. In addition, we introduced etched facets into the process to improve the usability of our edge-coupling elements. We believe that the additional flexibility in Input/Output interfacing combined with the integration of multiple devices onto one PIC to reduce the number of PIC-to-PIC alignments can contribute significantly to the development of compact, low-cost, and high-performance datacenter modules.

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“…Commonly, single or multilayer anti-reflection (AR) thin films with a precisely engineered thickness and refractive index are used to reduce these reflections. When exploited on InP waveguide facets, this approach allows to reduce reflections of the order of −30 dB [4]. For specific materials such as aluminum-containing alloys, thin films also provide a passivation function, minimizing the interaction between the semiconductor material and oxygen.…”

mentioning

confidence: 99%

Anti-reflection subwavelength gratings for InP-based waveguide facets

et al. 2021

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We demonstrate the anti-reflection properties of lithographically defined subwavelength gratings applied to the facets of integrated waveguides realized in the InP membrane-on-silicon platform. The subwavelength gratings are based on the gradient index effect to create a smooth index transition between the core material and air, making it possible to obtain reflections below − 30 d B at a wavelength of 1550 nm for both TE and TM polarized modes, as shown by 3D finite-difference time-domain simulations. Characterizations performed using Mach–Zehnder interferometers as test structures show relative reflections as low as − 25 d B , confirming the effectiveness of the technique.

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Integrated Four-Wavelength DFB Diode Laser Array for Continuous-Wave THz Generation

Cited by 14 publications

References 17 publications

Monolithically Integrated Microwave Frequency Synthesizer on InP Generic Foundry Platform

Monolithically Integrated Microwave Frequency Synthesizer on InP Generic Foundry Platform

InP-Based Foundry PICs for Optical Interconnects

Anti-reflection subwavelength gratings for InP-based waveguide facets

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