Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

Taylor, G.W.; Evaldsson, P.A.; Kiely, P.A.; Vang, T.; Claisse, P.R.; Daryanani, S.; Docter, D.P.; Sargood, S.K.; Cooke, P.

doi:10.1109/3.199330

Cited by 21 publications

(7 citation statements)

References 40 publications

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“…The scheme can also be used by WDM datacommunication networks based on 1550, 1300, 980 nm, or any other wavelength. For example, high-performance parallel protocols like Scalable Coherent Interface (SCI) and High-Perfromance Parallel Interface (HIPPI) can be implemented by this scheme using 980 nm based technology [6].…”

Section: Discussionmentioning

confidence: 99%

Elimination of clock recovery and framing by transporting clock, data and synchronization pulse for OC-192 using WDM

Kazi¹

1995

J. Lightwave Technol.

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Using the least dispersed wavelengths in a Wavelength Division Network (WDM) system to transport the clock and synchronization pulse as data signals along with byte wide data is proposed for OC-192 and higher rates. This scheme eliminates the clock recovery, scrambling and descrambling functions. A behavioral model of the WDM-based communication network using a hardware description language is described.

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Section: Discussionmentioning

confidence: 99%

Elimination of clock recovery and framing by transporting clock, data and synchronization pulse for OC-192 using WDM

Kazi¹

1995

J. Lightwave Technol.

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“…It should be noted that, during this same time period of the late 1980s to early 1990s, there were several other important efforts and devices in such digital optics. These included the group at Heriot-Watt University (see, e.g., [29]) that had remained active from the earliest semiconductor bistability observations [4], and work by others on other optoelectronic logic devices based on light emission during this time and beyond (see, e.g., [30]- [32]). …”

Section: Optical Interconnects To Silicon David a B Miller Fellowmentioning

confidence: 99%

Optical interconnects to silicon

Miller

2000

IEEE J. Select. Topics Quantum Electron.

311

130

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Abstract-This paper gives a brief historical summary of the development of the field of optical interconnects to silicon integrated circuits. It starts from roots in early optical switching phenomena, proceeds through novel semiconductor and quantum well optical and optoelectronic physics and devices, first proposals for optical interconnects, and optical computing and photonic switching demonstrators, to hybrid integrations of optoelectronic and silicon circuits that may solve basic scaling and other problems for interconnections in future information processing and switching machines.

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“…P type ohmic contacts are formed to the top (designated the gate) and to the bottom (designated the collector) layers. This is the structure of the Heterostructure Field Effect Transistor (HFET) [4 -8] which is the FET basis for optoelectronic integration in the Inversion Channel Technology [9][10][11][12]. The intersubband detection occurs in the quantum wells forming the channel and thus the sensing element is compatible with the baseline HFET technology.…”

Section: The Inversion Channel Intersubband Detectormentioning

confidence: 99%

<title>GaAs-based CCD structure for MWIR/LWIR imaging applications</title>

Taylor¹,

Kwan

2000

SPIE Proceedings

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A new approach to sensing with intersubband absorption is introduced. In contrast to the conventional Quantum Well Infrared Photodetector (QWIP) which is a multi-quantum well device, our structure has 1 -3 wells and uses resonant enhancement to achieve nearly complete absorption. In the QWIP the dark current is limited by the quantum well barrier in the range of 0.125 ev and thus cryogenic cooling is required in general to achieve BLIP operation. In the new structure, the dark current is limited by the band gap of GaAs/A1GaAs layers ( 1 .4eV). This difference implies that BLIP operation may be possible near room temperature. The detecting quantum well is used to form the storage well of an active pixel or a CCD device and the intersubband absorption mechanism removes charge from the quantum well starting from the full well condition. The state of depletion of the well is then clocked to the output amplifier as in a conventional CCD using noise reduction techniques such as correlated double sampling. Therefore, the hybrid bump bonding of the Si ROIC is no longer required. In this paper, we describe the concept and its advantage vis -à-vis the existing approach and a preliminary analysis ofthe sensitivity ofthe detection.

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Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications

Cited by 21 publications

References 40 publications

Elimination of clock recovery and framing by transporting clock, data and synchronization pulse for OC-192 using WDM

Elimination of clock recovery and framing by transporting clock, data and synchronization pulse for OC-192 using WDM

Optical interconnects to silicon

<title>GaAs-based CCD structure for MWIR/LWIR imaging applications</title>

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