Integrated Memory Devices Based on 2D Materials

Abstract

With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D‐material‐based memory‐device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain‐inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state‐of‐the‐art memory devices made from 2D materials, as well as their implications for brain‐inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.

Electrical Contacts With 2D Materials: Current Developments and Future Prospects

“…In integrated memory devices, progress toward high‐density integration has still been significantly hampered by the lack of large‐scale, suitable 2D memory materials. [ 58 ] Mechanical exfoliation has been utilized in numerous prior research to create prototype arrays; however, this method is inappropriate for dense integration. [ 59 ] The sole alternative is high‐temperature chemical or physical vapor deposition.…”

Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation

“…[39][40][41] Moreover, their planar structures endow outstanding compatibility with conventional wafer semiconductor technology. [42,43] To date, 2D material-based memristors have witnessed great progress in past decades. [30,[44][45][46] In particular, it is noteworthy that an emerging metal-based 2D material, namely MXene, has exhibited an intriguing prospect for achieving high-performance…”

Modulating the Performance of MoS2-Based Nanocrystal Memory via Ag Ion Implantation

“…Currently, memory manufacturers are turning to three-dimensional (3D) integration schemes to continue the historical growth rate of storage density. , 3D integration not only enhances the storage density but also overcomes some of the negative effects that are associated with physical restrictions like program noise and V T instability when the feature size goes down to 10 nm. − However, as the number of stacking layers increases, complex and tricky manufacturing processes such as etching would slow down the increasing of storage density, and stronger interlayer stress would seriously affect the reliability of storage . From a long-term perspective, it is necessary to explore simpler manufacturing methods and new reliable materials continuously for the further scaling of flash memory. , …”

“…4 From a long-term perspective, it is necessary to explore simpler manufacturing methods and new reliable materials continuously for the further scaling of flash memory. 12,13 In terms of the storage medium materials and structures, flash memory can be classified into three types, including floating gate memory devices, nitride-based charge trap memory devices, and nanocrystal charge trap memory devices. 14 Among these, the nanocrystal charge trap memory holds its own advantages.…”