Integrated microwave power sensor

Dehe, A.; Krozer, Viktor; Fricke, Klaus; Klingbeil, Harald; Beilenhoff, K.; Hartnagel, H.L.

doi:10.1049/el:19951506

Cited by 65 publications

(25 citation statements)

References 2 publications

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“…Only a quarter of the whole structure is shown since it exhibits -and -plane symmetry. It relates closely to the through connection power sensor in CPW technology formerly published in [5] and [6]. The cross-sectional dimensions are typical for the MMIC layout (Table I).…”

Section: Membrane Cpw Designmentioning

confidence: 95%

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Membrane-supported coplanar waveguides for MMIC and sensor application

Dehe

Klingbeil

Weil

et al. 1998

IEEE Microw. Guid. Wave Lett.

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Membrane-supported coplanar waveguides (CPW's) are needed for low-dispersive and low-loss millimeter-and submillimeter waves as well as for power sensor applications. This letter demonstrates CPW's on polyimid membranes micromachined on gallium arsenide (GaAs) that meet the requirements of a typical microwave monolithic integrated circuit (MMIC) process. The influence of the design parameters is simulated by finite difference in frequency domain (FDFD), in excellent agreement with the experiment. For a membrane CPW with ground to ground spacing of only 50 m and characteristic impedance of 115 , relative effective dielectric constants near 1.02 and attenuation of 0.14 dB/mm at 25 GHz have been achieved.

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Section: Membrane Cpw Designmentioning

confidence: 95%

“…Another application of membrane supported CPW's are the recently reported GaAs integrated microwave power sensors that need the membrane concept to increase sensitivity and speed [4]- [6]. For these sensors a proper understanding of the influence of the membrane part of the CPW is needed to achieve a good calibration.…”

Section: Introductionmentioning

confidence: 99%

Membrane-supported coplanar waveguides for MMIC and sensor application

Dehe

Klingbeil

Weil

et al. 1998

IEEE Microw. Guid. Wave Lett.

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“…Typically, the general principle to achieve inline RF MEMS power sensors is that a certain part of the transmitted RF power is extracted by some sensing agents and detected, e.g. an insertion power sensor [2], a capacitive power sensor [3], and coupling power sensors in our group [4], with the available RF signal during the power detection, but there is very little consideration of real applications. Currently, most of commercial power sensors are applied to microwave power meters as detection components like self-heating power sensors [5][6][7] and indirectly-heating power sensors [8][9][10], but they are termination devices compared with the inline sensors and the input RF signal is completely dissipated after the detection.…”

Section: Introductionmentioning

confidence: 99%

Characterization of packaged inline-type radio frequency microelectromechanical systems power sensors

Zhang

Liao

2013

Sensors and Actuators A: Physical

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“…Because the output voltage of thermoelectric power sensors is at an mV-level, it can not drive the load, overcome the noise and provide the logic level for the digital circuits. With the advent of current device technology and fabrication processes (Dehe et al 1995), the monolithic integration of thermoelectric power sensor and its amplification system, consequently forming system-on-chip (SOC), is a natural and important step in the development of micro-electro-mechanical systems (MEMS). However, the output voltages of the thermoelectric power sensor generally have frequency dependent characteristic (Milanovic et al 1997;Deominik et al 1992), which influences the measurement accuracy of microwave power.…”

Section: Introductionmentioning

confidence: 99%

A voltage source model on thermoelectric power sensor based on MEMS technology

Wang

Liao

2011

Microsyst Technol

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In order to achieve monolithic integration of thermoelectric power sensor and its amplification system and improve the measurement accuracy of microwave power, a voltage source model is researched in this paper. And the thermoelectric power sensor is designed and fabricated using MEMS technology and GaAs MMIC process. It is measured in the X-band (8-12 GHz) with the input power in 100 mW range. When the input microwave power is at 10, 50 and 100 mW, respectively, the frequency dependent coefficient k 1 is -0.073, -0.39 and -0.82 mV/ GHz, respectively. The sensitivity coefficient k 2 is 0.311, 0.303, 0.293, 0.284 and 0.279 mV/mW at 8, 9, 10, 11 and 12 GHz, respectively, and has an excellent linearity. Based on the voltage source model, the feedback coefficient of its amplification system is set to 0.0078 9 P in to compensate the loss power caused by frequency dependent characteristic. In addition to miniaturization and low cost, an advantage using this model is significantly improved measurement accuracy.

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Integrated microwave power sensor

Cited by 65 publications

References 2 publications

Membrane-supported coplanar waveguides for MMIC and sensor application

Membrane-supported coplanar waveguides for MMIC and sensor application

Characterization of packaged inline-type radio frequency microelectromechanical systems power sensors

A voltage source model on thermoelectric power sensor based on MEMS technology

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