Zn1Sb7Te12 thin films have been
deposited by magnetron co-sputtering of ZnTe and Sb2Te3 targets. The microstructure, phase-change speed, optical
cycling stability, and crystallization kinetics have been investigated
during thermal annealing and laser irradiation. The thermal-annealed
and laser-irradiated films give a clear evidence of the coexistence
of trigonal Sb2Te3 and cubic ZnTe phases, which
are homogeneously distributed in a single alloy as confirmed by advanced
scanning transmission electron microscopy. The formation of both phases
increases the initial nucleation sites, leading to the rapid phase-change
speed in the Zn1Sb7Te12 film. The
film has a minimum crystallization time of ∼3 ns at 70 mW with
almost no incubation period for the formation of critical nuclei compared
to Ge2Sb2Te5 and other Zn-based films.
Moreover, the complete crystallization of Zn1Sb7Te12 thin films is achieved within 10 ns. The ultrafast
two-dimensional nucleation and crystal growth speed in Zn1Sb7Te12 obtained from the laser-irradiated
system is almost 7 times faster compared to that in Ge2Sb2Te5 film. Controlling the crystallization
process through doping ZnTe into Sb2Te3 is thus
promising for the development of high-speed optical switching technology.