Integrated PIN photodiodes in high-performance BiCMOS technology

Förtsch, Michael; Zimmermann, Horst; Einbrodt, W.; Bach, K.; Pless, H.

doi:10.1109/iedm.2002.1175959

Cited by 24 publications

(19 citation statements)

References 8 publications

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“…For chip manufacturing of the devices presented in this work no additional mask has to be introduced into the fabrication of this BiCMOS pseudo twin-well process, which is a remarkable advantage over the approaches described in (Colinge, 1986;Yamamoto, Kubo, Nakao, 1995;Fö rtsch et al, 2002). Twin-well means that this process contains an n-type well and a p-type well.…”

Section: Fabricationmentioning

confidence: 98%

“…Instead of the wafer of the standard process which shows a typical doping concentrations of 10 15 cm À3 , a p þ wafer with a thick epitaxial layer with a doping concentration of only 2 Á 10 14 cm À3 is used. Unlike to (Fö rtsch et al, 2002) where even a lower doping concentration had to be achieved only a p-type epitaxial layer is used. The simulation of the photodiodes shows promising results with reduced diffusion effects.…”

Section: Fabricationmentioning

confidence: 99%

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Improvement of photodiodes in 0.35 µm BiCMOS technology

Marchlewski

Schneider-Hornstein

Zimmermann

2008

Elektrotech. Inftech.

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An improvement of monolithically integrated photodiodes in a p-type substrate of a commercial high-speed 0.35 mm SiGe heterojunction transistor (HBT) BiCMOS technology, with a supply voltage of 5 V, is presented. The detectors combine low capacitance with high bandwidth and responsivity which are realized with only slight process modifications with negligible influence on the transistor parameters. We achieve a speed improvement which results, e.g., in a bandwidth of 475 MHz and a responsivity of 0.17 A=W at blue light and a reverse bias voltage of 4 V. These detectors are designed to be applicable over the wide spectrum of technologically significant optical carrier wavelengths from near-infrared to blue and ultraviolet.Verbesserung von Fotodioden in Silizium= =Germanium(SiGe)-0,35-lm-BiCMOS-Technologie.Prä sentiert wird eine Verbesserung in der monolithischen Integration von Fotodioden in einer kommerziellen HochgeschwindigkeitsSilizium=Germanium(SiGe)-0,35-m-BiCMOS-Technologie mit 5 V Versorgungsspannung auf positiv dotiertem Siliziumsubstrat. Die hier entwickelten passiven Detektoren kombinieren eine Empfindlichkeit nahe an der theoretischen Quantenwirkungsgradgrenze in Silizium mit vergleichsweise niedrigen Kapazitä ten und hohen elektrischen Grenzfrequenzen. Die Implementierung erfolgt unter minimalen Prozessmodifikationen und vernachlä ssigbarer Auswirkung auf den bestehenden Halbleiterprozess. Fü r blaues Licht werden bei einer Betriebsspannung von 4 V Grenzfrequenzen von bis zu 475 MHz und eine elektrooptische Empfindlichkeit von 0,17 A=W gemessen. Der Detektor ist fü r Anwendungen mit optischen Wellenlä ngen aus einem weiten Spektralbereich von nahem Infrarot bis ins Ultraviolette geeignet.

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Section: Fabricationmentioning

confidence: 98%

Section: Fabricationmentioning

confidence: 99%

Improvement of photodiodes in 0.35 µm BiCMOS technology

Marchlewski

Schneider-Hornstein

Zimmermann

2008

Elektrotech. Inftech.

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“…The integrated photodiode is a pin photodiode, similar to [4] and [5]. The pin structure can be reached with only a single minor process variation.…”

Section: The Photodiodementioning

confidence: 99%

“…Figure 1 shows the struct&e of this PIN photodiode. The thickness of the p--epitaxial layer was chosen to obtain a high dynamic quantum efficiency and a fast response not only for a red light but also for near infrared light [5]. An antiueflec-(ion coating (ARC) was applied to achieve a high quantum efficiency.…”

Section: The Photodiodementioning

confidence: 99%

Low-power optoelectronic IC

Schneider

Förtsch

Zimmermann

12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.

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A very low-power optoelectronic integrated circuit (OEIC) for highly parallel optical receivers is introduced. It is necessary to minimize the power consumption of each optical receiver to enable an array of receivers. An integrated photodiode with low input capacitance takes care of the detection of visible and near infrared light. Rise-and fall times of tr=470ps and t i 4 2 1 p~, with an overall (optical and electrical) power consumption of 1.77mW at a data rate of 500Mbls down to a power consumption of 0.66mW at 40Mhls, were achieved. Because of the pin photodiode, a standard 0.6pm BiCMOS process is used, which needs only one minor process modification for the integration of the pin photodiode.

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“…1. It consists of the integrated PIN photodiode [9] and the variable gain TIA including CCI [10], [11], the non-grounded VCR R VCR [12], the reference voltage V REF for reverse photodiode biasing, and the non-inverting voltage amplifier. If operational amplifier's (OA's) transfer characteristic is approximated by the dominant pole p and given by A(j )=A 0 /(1+j / p ), the DC open-loop gain is A 0 >>1+R 4 /R 3 , and the output resistance R Z of the CCI's terminal Z is much larger than the largest equivalent resistance R VCRmax~1 00 k , the transimpedance T of the optical receiver is …”

Section: Basic Approachmentioning

confidence: 99%

Optical Receiver with Voltage-Controlled Transimpedance in BiCMOS Technology

Tadic

Zimmermann²

2006 25th International Conference on Microelectronics

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An optical receiver in 0.6 m BiCMOS technology with voltage-controlled resistor-based variable transimpedance is presented. The frequency bandwidth is independent of the photodiode capacitance. A linearity error smaller than 2.8 %, a sensitivity dynamic range of 76.3 (37.7 dB), an offset voltage smaller than 0.47 mV, a bandwidth up to 204 MHz, and a maximum power consumption of less than 4.05 mW have been achieved.

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Integrated PIN photodiodes in high-performance BiCMOS technology

Cited by 24 publications

References 8 publications

Improvement of photodiodes in 0.35 µm BiCMOS technology

Improvement of photodiodes in 0.35 µm BiCMOS technology

Low-power optoelectronic IC

Optical Receiver with Voltage-Controlled Transimpedance in BiCMOS Technology

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