Integrated Pockels Laser

Abstract

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0×10 18 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.

Electro-optically tunable single-frequency lasing from neodymium-doped lithium niobate microresonators

“…These properties can be used to passively stabilize lasers via self-injection locking [1][2][3][4]. In Ref.…”

Laser diode-pumped compact hybrid lithium niobate microring laser

“…Very recently, doping LN crystals with rare earth ions is an option to achieve the optical gain function in the TFLN platform, and optically pumped micro-lasers on TFLN have been demonstrated based on the rare earth ions doped TFLN [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Furthermore, electrically pumped hybrid lithium niobite/ semiconductor lasers have also been demonstrated by integration of the III-V laser on TFLN [21][22][23][24][25]. Several different complex integration approaches towards this goal have been developed, such as transfer printing, hybrid integration, flip-chip bonding and heterogeneous integration [21][22][23][24][25].…”

“…Furthermore, electrically pumped hybrid lithium niobite/ semiconductor lasers have also been demonstrated by integration of the III-V laser on TFLN [21][22][23][24][25]. Several different complex integration approaches towards this goal have been developed, such as transfer printing, hybrid integration, flip-chip bonding and heterogeneous integration [21][22][23][24][25]. Such approaches all need advanced nanofabrication, micro-transfer and bonding techniques as well as rich experience in relevant areas.…”