Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Kong, Long; Wang, H; Xiao, Shilin; Lü, Jing; Xia, Yuxing; Hu, Guangfu; Dai, Ning; Wang, Z H

doi:10.1088/0022-3727/41/5/052003

Cited by 24 publications

(15 citation statements)

References 11 publications

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“…Moreover, in some cases, LPE is also sensitive to the external conditions including magnetic field and voltage bias . In particular, the magnetic susceptibility are strongly correlated with the metallic materials adopted in the systems . Wang et al.…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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“…The range of application of such detectors is quite extensive and involves automatic control, positioning, surface profiling and other systems [7,8,9]. Surprisingly, the LPE appeared to be sensitive to external magnetic fields [10,11,12,13]. It is not excluded that the possibility of magnetic-field control of the LPV will open the way to fabrication of novel detectors and sensors or implementation of additional functionalities of the available devices.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Волков

Рауцкий

Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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We demonstrate that the lateral photovoltaic effect in the Fe/SiO 2 /p-Si structure not only strongly depends on the optical radiation wavelength and temperature, but is also sensitive to external magnetic fields. The magnetic field lowers the absolute value of photovoltage regardless of the wavelength and temperature; however, the relative photovoltage variation significantly depends on these parameters. The lateral photovoltage is observed both on the Fe film and Si substrate sides and results from separation of photoinduced electrons and holes in a built-in electric field of the Schottky barrier with their subsequent diffusion to the structure in the lateral direction from the illuminated area. The observed features in the behavior of the lateral photovoltaic effect originate from the variation in the light absorption coefficient of the semiconductor and the related quantum efficiency upon light wavelength variation. In addition, an important role is played by the change in the characteristics of the Schottky barrier at the redistribution of optically generated carriers and temperature variation. The effect of the magnetic field is attributed to the Lorentz force, which bends trajectories of carriers drifting under the action of the Schottky barrier field and, consequently, suppresses the lateral photovoltaic effect.

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“…The particular interest shown in Co/SiO 2 /Si structures is related to the possibility of developing broadband PSD for the visible, ultraviolet or infrared range [14][15][16] by adjusting the Co thickness. Previous studies of MOS structures, including Co/SiO 2 /Si, investigated the LPE by illuminating steadily a relatively large rectangular samples (about 10×10 mm 2 ).…”

Section: Introductionmentioning

confidence: 99%

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics.

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Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Cited by 24 publications

References 11 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

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