IEEE International Electron Devices Meeting 2003
DOI: 10.1109/iedm.2003.1269242
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Integrated sensor and electronics processing for <10?8 "iMEMS" inertial measurement unit components

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Cited by 29 publications
(7 citation statements)
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“…SCS was epitaxially grown in the surrounding area, and bipolar transistors and interconnects were subsequently defined [83]. The fabrication of thick SOI microstructures with integrated electronics was greatly facilitated by the introduction of a trench-refill isolation process [84], [85]. In this approach, a first DRIE step defines trenches that are refilled with oxide.…”
Section: Mems-first Processesmentioning
confidence: 99%
“…SCS was epitaxially grown in the surrounding area, and bipolar transistors and interconnects were subsequently defined [83]. The fabrication of thick SOI microstructures with integrated electronics was greatly facilitated by the introduction of a trench-refill isolation process [84], [85]. In this approach, a first DRIE step defines trenches that are refilled with oxide.…”
Section: Mems-first Processesmentioning
confidence: 99%
“…5). The described process is compatible with Analog Device's SOIMEMS process [4,5] and can be integrated with CMOS electronics by adding some pre-and post-CMOS fabrication steps. …”
Section: Fabricationmentioning
confidence: 99%
“…Figure 5.27 shows a single-chip chemical sensor with mass-sensitive, capacitive, and calorimetric sensing elements. An interesting alternative was presented by Analog Devices [133]: their combination of pre-CMOS and post-CMOS processing avoids the bottleneck of the lowtemperature restrictions of post-CMOS processing, but the challenge of introducing nonstandard wafers into a CMOS fab remains.…”
Section: Post-cmos Sanda Technologymentioning
confidence: 99%