Integrated signal conditioning for silicon pressure sensors

Borky, John M.; Wise, K.D.

doi:10.1109/t-ed.1979.19794

Cited by 88 publications

(21 citation statements)

References 4 publications

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“…First such microsystem was reported by Borkey and Wise 16 as early as 1974 using bipolar technology for signal conditioning circuit.…”

Section: Pressure Sensorsmentioning

confidence: 99%

Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

Saha¹,

Chaudhuri²

2009

DSJ

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A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed.

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“…First such microsystem was reported by Borkey and Wise 16 as early as 1974 using bipolar technology for signal conditioning circuit.…”

Section: Pressure Sensorsmentioning

confidence: 99%

Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

Saha¹,

Chaudhuri²

2009

DSJ

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“…Biomedical measurements like the blood pressure, oxygen content, flow rate have been of great importance since the revolutionary work based on MEMS reported by Kendall Wise and his groups in 1979 [32]. Today the medical invasive pressure measurements use fluid filled catheter that transfers measured pressure to external transducer [33].…”

Section: Bio Sensorsmentioning

confidence: 99%

Porous Silicon Sensors- Elusive and Erudite

Saha

2008

International Journal on Smart Sensing and Intelligent Systems

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Porous Silicon Sensors have been fabricated and tested successfully over the last few years as humidity sensors, vapour sensors, gas sensors, piezoresistive pressure sensors and bio-sensors. In each case it has displayed remarkably sensitivity, relatively low temperature operation and ease of fabrication. Brief description of fabrication and properties of all these types of different sensors is reported in this paper. The barriers of porous silicon like contact, non-uniformity, instability etc. are also discussed.

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“…The applied pressure produces an absolute change in the piezoresistor . The small change in piezoresistor value affects the voltage at node (1) According to the operation, the output current of the second also follows the input current since is a high impedance node and does not affect the value of the current through the piezoresistor. On the other hand, the output current of the third will be controlled by and .…”

Section: Circuit Descriptionmentioning

confidence: 99%

“…Silicon pressure sensors that utilize the piezoresistive effect are usually based in a fourelement Wheatstone bridge configuration, formed by two elements (their resistance increases with pressure) and two elements (their resistance decreases with pressure). The output voltage of such a transducer is sensed by an interface circuit usually based on operational amplifiers [1]. In these four-element pressure sensors, accurate resistance matching between and and equal variation of absolute resistance with pressure are two essential characteristics for proper operation to reduce the offset and increase the sensitivity of the sensor.…”

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confidence: 99%

A current-mode interface circuit for a piezoresistive pressure sensor

Samitier

Puig-Vidal

Bota

et al. 1998

IEEE Trans. Instrum. Meas.

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Abstract-An interfacing circuit for piezoresistive pressure sensors based on CMOS current conveyors is presented. The main advantages of the proposed interfacing circuit include the use of a single piezoresistor, the capability of offset compensation, and a versatile current-mode configuration, with current output and current or voltage input. Experimental tests confirm linear relation of output voltage versus piezoresistance variation.Index Terms-CMOS analog integrated circuit, current conveyor, current mode, interface circuit, pressure sensor.

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Integrated signal conditioning for silicon pressure sensors

Cited by 88 publications

References 4 publications

Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

Porous Silicon Sensors- Elusive and Erudite

A current-mode interface circuit for a piezoresistive pressure sensor

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