1979
DOI: 10.1109/t-ed.1979.19797
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Integrated silicon-PVF2acoustic transducer arrays

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Cited by 108 publications
(27 citation statements)
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“…Similar approaches, but using extended gates, have been reported in the past for ultrasonic [13], pressure sensing [14]. In the extended gate approach, the gate terminal of a MOS device is connected to a large size electrode or the extended gate that is located elsewhere on the chip.…”
Section: Working Principle Of Posfet Devicementioning
confidence: 98%
“…Similar approaches, but using extended gates, have been reported in the past for ultrasonic [13], pressure sensing [14]. In the extended gate approach, the gate terminal of a MOS device is connected to a large size electrode or the extended gate that is located elsewhere on the chip.…”
Section: Working Principle Of Posfet Devicementioning
confidence: 98%
“…As a first step towards realization of tactile sensing arrays based on the above said approach, arrays of tactile sensors were developed by directly coupling thin piezoelectric polymers films to 32 taxel MEAs realized on silicon die, as shown in Fig 2. The MEAs in this case act as the extended gates of FETs devices, which are external to the chip. Somewhat similar approach is used by Swartz et al (Swartz and Plummer 1979) and Fiorillo et al (Fiorillo, Spiegel et al 1990) to develop ultrasonic sensors and by Kolasar et. al.…”
Section: Piezoelectric Polymer -Microelectrode Arrays (Mea) Based Tacmentioning
confidence: 94%
“…In this structure Fig. 1a, a sheet of PVDF film is bonded to the extended gate of a MOSFET, resulting in a structure named as piezoelectric-oxide-semiconductor field-effect transistor (POSFET) [2]. Since the POSFET structure combines the active electronics with the sensing element on the same chip, it has been widely used and studied as an essential structure for piezoelectric or pyroelectric sensors [3,4].…”
Section: Acoustic Sensormentioning
confidence: 99%