2022
DOI: 10.1016/j.cej.2022.135968
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Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

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Cited by 27 publications
(25 citation statements)
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“…The changes in electrical conductivity and Seebeck coefficient with temperature is driven by the carrier mobility and bipolar conduction. Additionally, the TE properties of Bi 2 Si 2 Te 6 NS/PEDOT:PSS composite film according to temperature is similar to that of other TE materials using Bi 2 Si 2 Te 6 . …”
Section: Resultssupporting
confidence: 67%
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“…The changes in electrical conductivity and Seebeck coefficient with temperature is driven by the carrier mobility and bipolar conduction. Additionally, the TE properties of Bi 2 Si 2 Te 6 NS/PEDOT:PSS composite film according to temperature is similar to that of other TE materials using Bi 2 Si 2 Te 6 . …”
Section: Resultssupporting
confidence: 67%
“…The crystal structure of the Bi 2 Si 2 Te 6 is shown in Figure b. Thus, the as-fabricated Bi 2 Si 2 Te 6 crystallizes in a rhombohedral crystal structure belonging to the space group R 3̅. The Bi 2 Si 2 Te 6 slabs are stacked along the c -axis via van der Waals interactions. The slabs consist of the Bi atoms at the center of the BiTe 6 octahedra and the ethane-like Si 2 Te 6 .…”
Section: Resultsmentioning
confidence: 99%
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“…Thermoelectric (TE) efficiency is determined by the dimensionless figure of merit (ZT = S 2 σ T /κ, where T is the absolute temperature, S is the Seebeck coefficient, σ is the electrical conductivity, and κ is the total thermal conductivity) . Several strategies have been developed in recent years to improve the ZTs of TE materials, including band engineering, , phonon engineering, the use of energy-filter effects, , grain boundary engineering, , texture engineering, and entropy engineering, among others. As a new alloying concept, entropy engineering displays significant potential for delivering high-performance TE materials, with (Sn, Ge, Pb, Mn)­Te, SrTiO 3 , and half-Heusler alloys (HHs) reported in the literature.…”
Section: Introductionmentioning
confidence: 99%
“…Over the past decades, the enhancement of zT has been done primarily via engineering electronic or thermal properties. In terms of electronic properties, strategies such as band engineering and resonant doping are popular in improving the power factor [13][14][15] . Improvement of thermal properties can be achieved through the suppression of k l using point defect scattering, nano-structuring, and lattice anharmonicity [16][17][18][19][20][21] .…”
Section: Introductionmentioning
confidence: 99%