Integrating micromagnets and hybrid nanowires for topological quantum  computing

Jardine, Malcolm J. A.; Stenger, John P. T.; Jiang, Yifan; Jong, Eline J. de; Wang, Wenbo; Jayich, Ania; Frolov, Sergey

doi:10.21468/scipostphys.11.5.090

Cited by 11 publications

(4 citation statements)

References 39 publications

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“…Decoding mitigation, error correction, and hardware scalability are problems for quantum computing [ 25 ]. The development of fault-tolerant quantum systems, the investigation of new qubit technologies, and the optimization of quantum algorithms are the future directions [ 35 , 36 ]. To fully utilize quantum computing in a variety of scientific, technological, and computational domains, overcoming these obstacles is crucial.…”

Section: Introductionmentioning

confidence: 99%

Nanowires: Exponential speedup in quantum computing

Mimona,

Mobarak,

Ahmed

et al. 2024

Heliyon

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Section: Introductionmentioning

confidence: 99%

Nanowires: Exponential speedup in quantum computing

Mimona,

Mobarak,

Ahmed

et al. 2024

Heliyon

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“…Pb, Sn, Nb, to maximize the electron mobility and utilize larger superconducting gaps and higher critical magnetic fields [11][12][13][14][15][16]. Additionally, new proposed ar-chitectures include creating nanowire networks and inducing the field via micromagnets [17,18].…”

Section: Introductionmentioning

confidence: 99%

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

Jardine¹,

Dardzinski²,

Yu³

et al. 2023

Preprint

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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different kz values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in tri-layer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

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“…Adding in a magnetic field enables this system to behave as an effective spinless p-wave topological superconductor, which allows for MZM states. Recently, there have been new developments in material choices and experimental methods to identify MZMs in semiconductor nanowire–superconductor systems, designed to overcome challenges identified during the first wave of experiments. − These include trying new combinations of semiconductors and epitaxial superconductors, e.g., Pb, Sn, and Nb, to maximize the electron mobility and utilize larger superconducting gaps and higher critical magnetic fields. − Additionally, new proposed architectures include creating nanowire networks and inducing the field via micromagnets. , …”

Section: Introductionmentioning

confidence: 99%

“…11−15 Additionally, new proposed architectures include creating nanowire networks and inducing the field via micromagnets. 16,17 One of the challenges presented by the superconductor/ semiconductor nanowire construct, is that excessive coupling between the superconducting metal and semiconductor may "metallize" the semiconductor, thus rendering the topological phase out of reach. Theoretical studies that treated the semiconducting and superconducting properties via the Poisson−Schrodinger equation have shown that excessive coupling between the materials may lead to the semiconductor's requisite properties, such as the Landég-factor and spin−orbit-coupling (SOC), being renormalized to a value closer to the metal's.…”

Section: ■ Introductionmentioning

confidence: 99%

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

Jardine

Dardzinski

et al. 2023

ACS Appl. Mater. Interfaces

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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as β-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between α-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 2020, 6, 180]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for α-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies 2022, 5, 2100033] is used to resolve the contributions of different k z values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/α-Sn, InSb/CdTe, and CdTe/α-Sn, as well as in trilayer interfaces of InSb/CdTe/α-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the α-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor−superconductor devices in future Majorana zero modes experiments.

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Integrating micromagnets and hybrid nanowires for topological quantum computing

Cited by 11 publications

References 39 publications

Nanowires: Exponential speedup in quantum computing

Nanowires: Exponential speedup in quantum computing

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface

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