Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives

Abstract

In the last decade, two‐dimensional layered materials (2DLMs) have been drawing extensive attentions due to their unique properties, such as absence of surface dangling bonds, thickness‐dependent bandgap, high absorption coefficient, large specific surface area, and so on. But the high‐quality growth and transfer of wafer‐scale 2DLMs films is still a great challenge for the commercialization of pure 2DLMs‐based photodetectors. Conversely, the material growth and device fabrication technologies of three‐dimensional (3D) semiconductors photodetectors tend to be gradually matured. However, the further improvement of the photodetection performance is limited by the difficult heterogeneous integration or the inferior crystal quality via heteroepitaxy. Fortunately, 2D/3D van der Waals heterostructures (vdWH) combine the advantages of the two types of materials simultaneously, which may provide a new platform for developing high‐performance optoelectronic devices. Here, we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories, working mechanisms, and the typical fabrication methods of 2D/3D vdWH photodetector. Then, we outline the recent progress on 2D/3D vdWH‐based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials, including Si, Ge, GaAs, AlGaN, SiC, and so on. Finally, we highlight the current challenges and prospects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.

Y-Type Titanyl Phthalocyanine Nanoparticle and Hollow ZnS Nanotube Heterojunctions with Cavity Enhancement Effect for UV–Vis–NIR Photodetectors

“…In particular, the maximum EQE value of Y:ZT-PD is greater than those of broadband PDs reported in most of the research currently in publication. ,− The EQE values display a positive correlation with the bias voltage (Figure c), which could be expressed by the equation EQE = χτμ V / L 2 , where χ, τ, μ, V , and L are the e–h pair separation efficiency, lifetime of trapped electrons, mobility, bias voltage, and thickness of the film, respectively. Because all of χ, τ, and μ rise with the bias voltage, there is a positive connection between the EQE and bias voltage.…”

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

“…In addition to responsivity and detectivity, response speed represents another important merit to assess the performance of a phototransistor. 43 The time-resolved photoresponse was measured by toggling the laser on and off at V ds = 1 V, as depicted in panels e and f of Figure 5. When the laser is activated or deactivated, the photocurrent shows a corresponding rise or fall, respectively.…”

“…This behavior can be attributed to the gradual saturation of the photocurrent at higher illumination power intensities. In addition to responsivity and detectivity, response speed represents another important merit to assess the performance of a phototransistor . The time-resolved photoresponse was measured by toggling the laser on and off at V ds = 1 V, as depicted in panels e and f of Figure .…”

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures

“…Subsequently, great efforts have been made to resolve the aforementioned issues. The idea that stacking 2D/three-dimensional (3D) hybrid-dimensional heterostructures may lay a foundation for meeting various photodetection demands, ,− wherein TMDs/Ga 2 O 3 hold prominent prospects. Monolayer (1L) TMDs have been proven to be some of the best candidates for high-performance photodetectors in the vis–NIR range due to the advantages of a direct band gap, effective optical absorption within the vis–NIR range, relatively high in-plane carrier mobility, high transparency, and good flexibility. ,,− As a wide-bandgap semiconductor, Ga 2 O 3 has emerged as an efficient material for ultrahigh responsivity, rapid recovery, and solar-blind photodetectors.…”