2022 IEEE International Symposium on Circuits and Systems (ISCAS) 2022
DOI: 10.1109/iscas48785.2022.9937648
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Integrating Ultra-thin SiGe BiCMOS Power Amplifier Chip in Combination with Flexible Antenna in the Polymer Foil

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(2 citation statements)
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“…9, the measured peak gain frequency of the thinned PA on the conductor material (metal Thermo-Chuck) shifts about 600 MHz toward higher frequencies compared to the thin silicon chip on dielectric material and the thick silicon chip. The significant frequency difference is due to the image mirror current within the conducting material [19]. Despite the thin substrate of the chip, no significant S-parameter degradation was observed in the measurements realized on the dielectric material (FR4).…”
Section: Stand-alone Prototype Of the Rf-chipmentioning
confidence: 99%
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“…9, the measured peak gain frequency of the thinned PA on the conductor material (metal Thermo-Chuck) shifts about 600 MHz toward higher frequencies compared to the thin silicon chip on dielectric material and the thick silicon chip. The significant frequency difference is due to the image mirror current within the conducting material [19]. Despite the thin substrate of the chip, no significant S-parameter degradation was observed in the measurements realized on the dielectric material (FR4).…”
Section: Stand-alone Prototype Of the Rf-chipmentioning
confidence: 99%
“…Previous studies also evaluated the RF performance of the PA chip embedded in the polyimide foil [13]. The recent implementation of thinned Si PA on a 1 μm-thick AlSiCu heat spreader in foil substrate shows that the patterned heat spreader instead of the solid one can be used to prevent the image mirror currents induced in the heat spreader due to the magnetic field of the passives [19].…”
Section: Stand-alone Prototype Of the Rf-chipmentioning
confidence: 99%