Integration Aspects of Advanced Ferroelectric Thin-Film Memories

Taylor, Deborah J.

doi:10.1016/b978-012265320-9/50101-x

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Fabrication Process and Evaluation Of Monolithic Focal Planes1

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2004

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“…Finally, the sacrificial layer was etched to form the thermal isolation structure. of merit, which was most appropriate for application to the IR detector at Zr/Ti = 30/70 [9]. To check process reliability, the ferroelectric characteristics of the functional material, i.e., a Pb(Zr 0.3 Ti 0.7 )O 3 thin film, were examined after each process step.…”

Section: Fabrication Process and Evaluation Of Monolithic Focal Planesmentioning

confidence: 99%

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer

Ryu¹,

Cho²

2004

J. Micromech. Microeng.

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The development of a surface micromachined infrared ray (IR) focal plane array (FPA), in which a single SiO2 layer functions as an IR absorbing plate and a Pb(Zr0.3Ti0.7)O3 thin film serves as a thermally sensitive material is described. The advantages of using SiO2 as an IR absorbing layer include the fact that it has good IR absorbance within the 8–12 µm spectral range. In this case, about 60% of the incident IR spectrum in this range was absorbed. Another important advantage of SiO2, when applied to the top of the Pt/PZT/Pt stack, is that it functions as a supporting membrane. Consequently, the IR absorbing layer forms as one body on the membrane structure, which simplifies the overall MEMS process and provides a robust structure.

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Section: Fabrication Process and Evaluation Of Monolithic Focal Planesmentioning

confidence: 99%

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer

Ryu¹,

Cho²

2004

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

Integration Aspects of Advanced Ferroelectric Thin-Film Memories

Cited by 1 publication

References 2 publications

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer

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Integration Aspects of Advanced Ferroelectric Thin-Film Memories

Cited by 1 publication

References 2 publications

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO2as the IR absorbing layer

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO2as the IR absorbing layer

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Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer

Surface micromachining and characterization of a pyroelectric infrared ray focal plane array utilizing SiO₂as the IR absorbing layer