Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Practical Determination of Individual Element Resistive States in Selectorless RRAM Arrays

“…7: for example the device sitting at (word, bit) location (7,8) has a value of 220 kΩ whilst its corresponding full word and full bit have values of 908 Ω and 832 Ω respectively. If we set device (7,8) as the target, then we obtain In order to investigate the resulting data further, the distributions of fractional errors and their corresponding cumulative distributions were extracted for each read-out technique as shown in Fig. 9, top two rows.…”

“…The key benefit of RRAM scalability is typically leveraged by implementing RRAM cells as crossbar arrays; a configuration that maximises memory area density (down to 4F 2 /storage node for planar crossbars, where F is the minimum feature size of the crossbar array [6], [7]). The main drawback of this implementation, however, is the issue of 'sneak currents' [8] whereby current tends to pass through Alexander Serb, William Redman-White and Themis Prodromakis are with the Southampton Nano Group based in Nano-Fabrication Centre, Department of Electronics and Computer Science, Faculty of Physical Science & Engineering, University of Southampton, Highfield, Southampton SO17 1BJ.…”

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

“…First, it is well known that the tunnel barrier can exhibit non-linear I-V characteristics owing to the electric-field-controlled modification of the barrier thickness of the tunnel barrier [12,13]. The modification of the barrier thickness of the tunnel barrier exhibits DT and FNT for suppressed current and sufficient current at V Low and V High , respectively.…”

“…However, they are structurally and compositionally complex for one-selector one-ReRAM (1S1R) integration [9,10]. Therefore, selector-less ReRAMs with non-linear I LRS behavior and without complex compositional and structural integration have been investigated [11,12]. However, the origin of the selector-less ReRAM has not been investigated, and its switching reliability has not been considered for cross-point array operation.…”

Memory Select Devices

“…Appropriately chosen tunneling oxide layer not only provide built-in nonlinearity but also assist resistive switching process. In a TiO x /Ta 2 O 5 bi-layer RRAM device, the nonlinearity and resistive switching characteristics can be modulated by processing conditions, which may enable a self-selecting crossbar array [83]. It was reported that a 64 Mb multi-layer RRAM array was fabricated with 0.13 μm CMOS process based on an oxide stack with an insulating oxide layer on top of a conductive oxide layer [84].…”