Integration of a novel high-voltage Giga-Hertz DMOS transistor into a standard CMOS process

Söderbärg, Anders; Edholm, Bengt; Olsson, Jörgen; Masszi, Ferenc; Eklund, Klas-Håkan

doi:10.1109/iedm.1995.499379

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Cited by 7 publications

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“…The investigated LDMOS transistors are made in a standard CMOS process with an additional p-base implantation [6]. The transistor structure is schematically shown in Fig.…”

Section: Device Modeling and Resultsmentioning

confidence: 99%

Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors

Ankarcrona¹,

Olsson

2002

Physica Scripta

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High voltage lateral DMOS transistors are very di⁄cult to model due to the complex structure. As a result of complexity and the range of variation in transistor structure no general LDMOS model exists. Standard SPICE models of MOSFETs, JFETs together with a resistor have been used in the sub-circuit model. Self-heating e¡ects have been included in a specially design unit. The model shows good overall accuracy.

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“…The investigated LDMOS transistors are made in a standard CMOS process with an additional p-base implantation [6]. The transistor structure is schematically shown in Fig.…”

Section: Device Modeling and Resultsmentioning

confidence: 99%